Determination method of semispherical hyperelastic microstructure of designable linear sensitivity sensor
A method of determining, hemispherical technology, applied in the measurement of the properties and forces of piezoelectric resistance materials, etc., can solve the problems of weak linearity, difficult function customization, etc., and achieve the effect of satisfying the calculation
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[0089] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It is particularly pointed out that the following examples are only used to illustrate the present invention, but do not limit the scope of the present invention. Likewise, the following embodiments are only some rather than all embodiments of the present invention, and all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present invention.
[0090] like figure 1 As shown, the solution of this embodiment provides a piezoresistive flexible pressure sensor with a designable linear sensitivity, which includes:
[0091] Sensitive Cell Layer 1,
[0092] contact electrodes 2, arranged on the upper and lower end faces of the sensitive cell layer, and
[0093] The flexible encapsulation layer 3 encapsulates the contact electrode and the sensitive unit layer therein;
[0094]...
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