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Determination method of semispherical hyperelastic microstructure of designable linear sensitivity sensor

A method of determining, hemispherical technology, applied in the measurement of the properties and forces of piezoelectric resistance materials, etc., can solve the problems of weak linearity, difficult function customization, etc., and achieve the effect of satisfying the calculation

Active Publication Date: 2022-08-09
XIAMEN UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

At the same time, although the flexible sensors prepared by the above-mentioned bionic methods have better linearity, their microstructures are randomly obtained, and it is difficult to customize the functions in actual application scenarios.
To this end, step microstructures were made by introducing laser-processed silicon wafers [Zhong M, Zhang L et al. Chemical Engineering Journal, 2021: 412, 128649], and machining micro-dome structure templates [Ji B, Zhou Q et al. Small,2021:17(43),2103312], artificial dispensing microspherical structure [Fang F,Tao X et al.Micromachines,2020:11(2),161], etc., are all pre-designed to complete specific microstructure processing, Thus avoiding the introduction of random structure, but also showing a certain weak linearity

Method used

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  • Determination method of semispherical hyperelastic microstructure of designable linear sensitivity sensor
  • Determination method of semispherical hyperelastic microstructure of designable linear sensitivity sensor
  • Determination method of semispherical hyperelastic microstructure of designable linear sensitivity sensor

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Embodiment Construction

[0089] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It is particularly pointed out that the following examples are only used to illustrate the present invention, but do not limit the scope of the present invention. Likewise, the following embodiments are only some rather than all embodiments of the present invention, and all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present invention.

[0090] like figure 1 As shown, the solution of this embodiment provides a piezoresistive flexible pressure sensor with a designable linear sensitivity, which includes:

[0091] Sensitive Cell Layer 1,

[0092] contact electrodes 2, arranged on the upper and lower end faces of the sensitive cell layer, and

[0093] The flexible encapsulation layer 3 encapsulates the contact electrode and the sensitive unit layer therein;

[0094]...

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Abstract

The invention discloses a method for determining a semispherical hyperelastic microstructure of a designable linear sensitivity sensor, and the method comprises the steps: enabling a semispherical microstructure surface on a sensing unit layer of the sensor to directly contact with a contact electrode, so that the semispherical microstructure made of a hyperelastic body is subjected to structural deformation after pressure is applied; the sensor resistance is linearly changed by changing the contact area between the contact electrode and the sensitive layer; according to the determination method, the contact surface area of a single microstructure after deformation and the generated height change are deduced by utilizing a superelastic body deformation continuity assumption, and then different step sizes, numbers and layouts of the microstructures are calculated according to normal stress distribution balance conditions and a preset deformation threshold value under the multi-step hemispherical microstructures. The design determination of adopting the hyperelastic material as the sensitive layer of the piezoresistive sensor is realized, and the application requirements of quantitatively designing the linear sensitivity are met; the method can meet the requirements of simple calculation and high accuracy, and the purpose that the sensor can design linear sensitivity is achieved.

Description

technical field [0001] The invention relates to the technical field of flexible piezoresistive sensors, in particular to the field of microstructure design of flexible piezoresistive sensors, in particular to a method for determining a hemispherical superelastic microstructure of a linear sensitivity sensor, which is particularly suitable for determining linearity, detection interval A method for determining the size, quantity and layout of microstructures using superelastic materials as the substrate of the sensitive unit layer with higher requirements. Background technique [0002] Due to its inherent flexibility and better attachability, flexible sensors can achieve the purpose of monitoring target functions with appropriate feedback signals, such as human health detection, gesture recognition and prediction, robotic space perception and human-computer interaction. and other fields are continuing to play its important application value. Among them, the piezoresistive pre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/18
CPCG01L1/18
Inventor 吴德志徐振金曹聪曾国龙许晋滨
Owner XIAMEN UNIV
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