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On-line measurement apparatus for high-temperature mechanics behavior of multi-layer film basal body structure

A high-temperature mechanics and measuring device technology, applied in the field of structural deformation and mechanical experiments, and engineering materials, it can solve problems such as film damage, cavitation, and reduce overall structural performance, and achieve the effect of avoiding the impact.

Active Publication Date: 2009-01-28
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually, under the action of misfit strain and thermal cycle load in the multilayer thin film structure, there will be high stress in the thin film material, these stresses may not only lead to the destruction of the thin film, but also may induce holes, leading to electromigration, so that The electrical and magnetic properties of the film are greatly affected, degrading the performance of the overall structure

Method used

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  • On-line measurement apparatus for high-temperature mechanics behavior of multi-layer film basal body structure
  • On-line measurement apparatus for high-temperature mechanics behavior of multi-layer film basal body structure
  • On-line measurement apparatus for high-temperature mechanics behavior of multi-layer film basal body structure

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Embodiment Construction

[0020] The specific structure and implementation mode of the present invention will be further described below in conjunction with the accompanying drawings, but the protection scope of the present invention should not be limited thereby.

[0021] figure 1 It is a structural schematic diagram of an on-line measuring device for the high-temperature mechanical behavior of a multilayer film matrix structure provided by the present invention, the device includes a heating furnace 1 with a signal acquisition converter 8, an optical system, and a data processing and display system 18; the heating furnace 1 includes Insulation wall 2, heating rod 3, thermocouple 5 and temperature control panel 7, described heating rod 3 is respectively arranged on the top and the bottom in the heating furnace, and the specimen tray 6 is set in the described heating furnace 1, after heating The first light-through window 4a and the second light-through window 4b are symmetrically arranged on the left ...

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Abstract

The invention discloses an online measuring device for the high-temperature mechanical behavior of a multilayer film matrix structure, belonging to the technical fields of engineering materials, structural deformation and mechanical experiments. The device comprises an isolated wall, an optical system and a data processing and display system, wherein the isolated wall comprises an insulated wall, a heating rod, a transmission window, a thermocouple, a specimen tray and a temperature control panel; and the optical system comprises a laser, a beam expander, an optical reflector, an optical grating, a lens, a filtering screen, a CCD camera and a piezoelectric brake. Through reconstructing the prior heating furnace, the online measuring device combines heating equipment with optical equipment so as to realize stress measurement for the multilayer film matrix structure at a high temperature. Moreover, the online measuring device has compact structure, and can realize online realtime monitoring for the mechanical property changes of the multilayer film matrix structure during heating.

Description

technical field [0001] The invention relates to a measuring device aimed at the mechanical behavior of a multilayer film matrix structure at high temperature, and belongs to the technical fields of engineering materials, structural deformation and mechanical experiments. Background technique [0002] Most semiconductor devices and integrated circuits are made of semiconductor silicon materials. Silicon is made into wafers through processes such as crystal pulling, slicing, polishing, and cleaning, and various chips and microelectronic devices are manufactured based on etching silicon wafers and depositing multilayer films on them. Therefore, the properties of this silicon wafer-level thin film material and thin film / substrate structure determine the usability and reliability of microelectronics and semiconductor products, and are also a necessary condition for the miniaturization and large-scale production of integrated circuits. The detection method and reliability analysi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
Inventor 冯雪董雪林方岱宁黄克智
Owner TSINGHUA UNIV
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