Method for forming self-aligning contact structure in semiconductor IC device

Abstract

Methods of forming integrated circuit devices include the use of preferred self-aligned contact hole fabrication steps. These steps improve process reliability. A plurality of line patterns are formed on a substrate. A capping insulating layer is formed to cover the surface of the line patterns and the surface of the substrate. An upper interlayer insulating layer is formed on the capping insulating layer to fill a gap region between the line patterns. The upper interlayer insulating layer and the capping insulating layer are patterned, so that the first contact hole is formed between the line patterns. By wet-etching the upper interlayer insulating layer selectively, the first contact hole is extended, so that the second contact hole for exposing the capping insulating layer on the sidewall of the line patterns is formed.

Description

technical field [0001] This application is based on the priority of Korean Patent Application No. 2000-05358 filed on February 3, 2000, the contents of which are incorporated herein by reference. Background technique [0002] The present application relates to methods of manufacturing integrated circuit devices, and more particularly to methods of forming self-aligned contact structures in semiconductor integrated circuit devices. [0003] Attempts to increase integration density in microelectronic integrated circuits have generally resulted in the fabrication of smaller and more closely spaced devices. In order to access these devices, the conventional technique of defining the location of contact holes for these devices using photolithographic processes must be improved. Such improvements typically include the development of lithographic alignment techniques that reduce errors. Furthermore, when forming highly integrated devices, attempts to reduce contact hole size have...

AI Technical Summary

Problems solved by technology

[0006] Therefore, the self-aligned contact hole fabrication technique still has reliability problems when using photolithographic alignment techniques with large alignment errors

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