Unlock instant, AI-driven research and patent intelligence for your innovation.

Porous insulating material and method for making same

A technology of porous and sacrificial materials, which is applied in the manufacture of semiconductor/solid-state devices, coatings, circuits, etc., and can solve the problem that the dielectric constant of objects cannot be satisfied

Inactive Publication Date: 2004-10-13
GEORGIA TECH RES CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the reduction of the dielectric constant of the object by this method may not meet the needs of some newer electronic applications such as higher-speed integrated circuits

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Porous insulating material and method for making same
  • Porous insulating material and method for making same
  • Porous insulating material and method for making same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0096] The method for preparing a mixture of 20% triethoxysilyl norbornene polymer (Mw=158000, determined in monochlorobenzene by GPC method) and 80% MSQ (Accuspin T-18) (by weight) is The above two components were respectively dissolved in an appropriate amount of 4-methyl-pentanone, and then the two solutions were mixed under stirring. The resulting solution was stirred at room temperature for 1 hour to obtain a sacrificial material / dielectric material composition. The resulting composition was then spin-coated on a metallized silicon substrate to obtain a dielectric layer with a thickness of approximately 620 nm. Thereafter, the coated metallized silicon substrate is inspected by an optical microscope, and it is confirmed that there are no defects in the sacrificial material / dielectric material composition layer and there are no pinholes and through holes.

[0097] Then, the metallized silicon substrate coated with the sacrificial material / dielectric material composition w...

Embodiment 2

[0104] The metallized silicon substrate of Example 2 was prepared in the same manner as described above in Example 1, except that the dielectric layer was composed of 20% triethoxysilyl norbornene polymer and 80% Accuglass 512 production. The final curing temperature for Example 2 was about 400°C. The average dielectric constant of the dielectric layer of this embodiment was measured and found to be 2.71 with a standard deviation of 0.05.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
decomposition temperatureaaaaaaaaaa
pore sizeaaaaaaaaaa
decomposition temperatureaaaaaaaaaa
Login to View More

Abstract

A method of forming a porous insulating composition comprising the steps of (A) providing at least one organic sacrificial material / dielectric material composition comprising at least one organic sacrificial material and at least one dielectric material; and (B) removing the at least one organic sacrificial material in the at least one organic sacrificial material / dielectric material composition, in order to generate pores in the at least one dielectric material. Also disclosed is a composition useful in making a porous insulator, comprising a heat-activated, pore-forming, sacrificial material; and a dielectric material. Alternatively, the composition useful in making a porous insulator, comprises at least one pore-forming, organic sacrificial material; and at least one dielectric material, wherein the at least one pore-forming, material is a norbornene-type polymer.

Description

technical field [0001] Broadly, the invention described herein relates to methods of forming porous insulating articles (or compositions or compounds), and more specifically, the invention relates to compounds used in the preparation of such articles. Background technique [0002] As a result of advances in integrated circuit technology, the space between the metal lines in any resulting integrated circuit has become smaller and smaller, now in the sub-micron range. Increased capacitive coupling occurs due to the reduced space between conductive elements in integrated circuits. Increased capacitive coupling results in increased interference, increased capacitive losses, and increased resistance-capacitance (RC) time constants. [0003] In the microelectronics industry, inorganic materials such as silicon dioxide and silicon nitride have traditionally been used as insulating and passivation materials for the manufacture of integrated circuits. However, with the demand for s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09D5/25C09D7/12C09D145/00C09D183/04C09D201/00H01L21/312H01L21/316H01L21/318H01L21/76H01L21/762H01L21/768H01L23/498H01L23/522H01L23/532
CPCH01L21/7682H01L23/5222H01L23/49894H01L21/3185H01L21/316H01L21/02203H01L21/02282H01L2924/0002H01L21/762H01L21/3121H01L21/02216H01L21/31695H01L21/02126H01L23/5329H01L21/02118H01L2924/00
Inventor P·A·科尔
Owner GEORGIA TECH RES CORP