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Ferroelectric memory device with ferroelectric capacitor

A ferroelectric capacitor and ferroelectric storage technology, which is applied in static memory, electric solid-state devices, digital memory information, etc., can solve the problems of adding steps, storing charge loss, etc.

Inactive Publication Date: 2004-11-10
HYUNDAI ELECTRONICS IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unfortunately, the prior art suffers from the disadvantage that a sustained small fluctuation at node A (potential) results in a loss of stored charge
This results in a substantial increase in steps after the ferroelectric capacitor has been fabricated

Method used

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  • Ferroelectric memory device with ferroelectric capacitor
  • Ferroelectric memory device with ferroelectric capacitor
  • Ferroelectric memory device with ferroelectric capacitor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] see image 3 , which shows the implementation figure 2 Schematic layout of the memory cell.

[0021] Such as image 3 As shown, this figure shows the relative positions among an active region, a positive word line WL, a negative word line WL and a field oxide region FOX. In this structure, two positive word lines and two negative word lines pass through the field oxidation region FOX, they are arranged parallel to each other and separated by the active area, and the two positive word lines are arranged between the two negative word lines. A node C contacting the bit line BL is located at a position surrounded by two positive word lines and two field oxidation regions FOX, and a node A is located at a position surrounded by a positive word line WL, a negative word line WL and two field oxidation regions FOX around the location. A node B transmits the voltage of the plate line PL to the node A through the second transistor 23, and the node B is disposed on the active...

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Abstract

A memory device comprises a first switching transistor having its gate coupled to a positive wordline, and its source and drain coupled between a bitline and a first node respectively; a ferroelectric capacitor coupled between the first node and a plateline; and a second switching transistor having its gate coupled to a negative wordline, and its source and drain coupled to the first node and the plateline respectively. A second node at which the source of the second switching transistor and the plateline are contacted is formed on an active area locating between two adjacent negative wordlines; and the ferroelectric capacitor is formed on the active area. The active area is broadly formed to prevent a resistance of the second node from being occurred. the invention also reduces the producing steps of capacitors.

Description

technical field [0001] The present invention relates to a semiconductor memory device, and more particularly, to a ferroelectric memory device as a data storage device using a ferroelectric capacitor obtained by using a ferroelectric material as a dielectric of the capacitor. Background technique [0002] It is well known that a capacitor made of a ferroelectric material is used as a nonvolatile memory device because it can be used to detect a change in charge induced by a voltage applied across the capacitor and can store the detected value therein as data. [0003] figure 1 is a wiring diagram of a memory cell of a conventional ferroelectric memory device. exist figure 1 Two memory cells are shown in , each of which has a switching transistor 11 and a ferroelectric capacitor 12 . [0004] see figure 1 , in a memory cell, the gate of the switching transistor 11 is connected to a word line WL1 controlling the switching transistor 11, its source is connected to a bit line...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/22H10B20/00
CPCG11C11/22
Inventor 金宰焕
Owner HYUNDAI ELECTRONICS IND CO LTD