Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacture of electron source and imaging device

An imaging device and electron source technology, which is applied in the manufacture of discharge tubes/lamps, electrode systems, components of discharge tubes/lamps, etc., can solve the problems of increasing manufacturing costs and unsatisfactory sodium diffusion

Inactive Publication Date: 2005-02-02
CANON KK
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But will be on soda lime glass substrate with SiN or SiO 2 Stress is generated between films, when SiN or SiO 2 When the film is very thick, it will cause them to separate
On the other hand, when the electron source is exposed to high temperature for a long time in the manufacturing process, thin SiN or SiO 2 Thin film does not satisfactorily suppress sodium diffusion
[0015] Alternatively, forming SiN or SiO 2 The sputtering process of thin films requires a larger sputtering system relative to the size of the substrate, thereby increasing the manufacturing cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacture of electron source and imaging device
  • Manufacture of electron source and imaging device
  • Manufacture of electron source and imaging device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0184] [Example 1, Comparative Examples 1 and 2]

[0185] (step 1)

[0186] In embodiment 1 and comparative example 2, soda lime glass substrate (SiO 2 : 74%, Na 2 O: 12%, CaO: 9%, K 2 O: 3%, MgO: 2%) in SO 2 In the mixed flow of air and air, heated at 550 ° C, then washed with hot water and dried, to produce a "sodium-removed layer" on the surface of each substrate used in Example 1 and Comparative Example 2 ( Figure 3A ). By controlling the heat treatment time, the thickness of the "sodium-removed layer" on the substrate in Comparative Example 2 was 5 μm, and the thickness of the "sodium-removed layer" on the substrate in Example 1 was 10 μm. For comparison, a soda lime glass substrate having the same composition and having been heat-treated and cleaned only with a cleaning agent and hot water was prepared (Comparative Example 1). A total of 10 samples were prepared for each example to observe the repeatability of the technique.

[0187] (step 2)

[0188] Then for e...

Embodiment 2

[0206] In this example, an electron source including a large number of electron-emitting devices having Figure 1A and 1B configuration, and has Figure 7 Matrix wiring setup shown. Refer below Figures 15A to 15H This fabrication process is explained for each device.

[0207] (step 1)

[0208] on SO 2 A soda lime glass substrate of the same composition as that of the substrate of Example 1 was heated at 550°C for 3 hours in a mixed flow of gas and air. Then wash with hot water and dry. The result of this step is the formation of a "de-sodiumized layer" on the surface with a thickness of about 50 μm.

[0209] (step 2)

[0210] On the "sodium-removed layer" 6 (treated surface layer) of the substrate 71, Cr and Au with a thickness of 5nm and 600nm respectively are set successively, and a photoresist (AZ1370: purchased from Hoechst Company) is formed thereon. The photomask image is then exposed and developed to produce a photoresist pattern of the lower wiring 72, and th...

Embodiment 3

[0230] In this embodiment, up to step 7 are the same as in embodiment 2, except that in step 1, a Cr thin film is formed on the periphery of the substrate by evaporation so that no "sodium-removed layer" is formed there.

[0231] Then, the shell was prepared according to step 8 in Example 2. However, in this embodiment, the electron source substrate acts as a back plate, so that no "sodium-removed layer" is formed at the junction 161 of the substrate 71 and the support frame 82. Steps 9 and 10 in Example 2 were then carried out in this example. Figure 16 The imaging device of this embodiment is schematically shown.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

Disclosed is a method for preparing substrate-containing electron emitting device amounted on surface of the substance and imaging device of imaging part which using electronic irradiation emitted by electron emitting device to form image, which including step of forming the electron emitting device on the substance, wherein the substance containing sodium which sodium concentration is lower than the bulk body of the substrate round the surface of substance carrying the electron emitting device.

Description

[0001] This application is an invention submitted by Nishimura Michiyo et al. on December 26, 1997, the application number is 97120856.5, and the title of the invention is "Electron source substrate, electron source, and imaging device using the substrate and its manufacturing method" A divisional application of a patent application. technical field [0002] The present invention relates to an electron source usable in an imaging device and a method of manufacturing the imaging device. Background technique [0003] Two types of electron-emitting devices are known: a thermionic emission electron source and a cold cathode electron source. The cold cathode electron sources are field emission type (hereinafter referred to as FE type), metal / insulator / metal type (hereinafter referred to as MIM type) and surface conduction electron emission type. Examples of FE-type devices include "Field Emission" proposed by W.P. Dyke and W.W. Dolan and published in Electron Physics Vol. 8, p. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C03C17/06C03C21/00H01J1/316
CPCC03C21/002C03C17/06H01J1/316
Inventor 西村三千代河出一佐哲宫崎和也
Owner CANON KK
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com