Magnetic tunnel device, magnetic storage and element using said device and its access method
A magnetic storage unit and magnetic tunnel junction technology, which is applied in the field of magnetic tunnel junction devices, can solve problems such as difficulty in keeping records, and achieve the effect of reducing power consumption
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Embodiment 1
[0057] An embodiment of the present invention will be described below with reference to the accompanying drawings.
[0058] like figure 1 As shown, the MTJ device 1 according to this embodiment is composed of an antiferromagnetic layer 11, a ferromagnetic layer 12, an insulating layer 13, a ferromagnetic layer 14, metal layers 15, 16 and a closed magnetic circuit layer 17 (the third magnetic layer) . The above-mentioned antiferromagnetic layer 11 and ferromagnetic layer 12 are exchange-bonded, and the ferromagnetic layer 14 and closed magnetic circuit layer 17 are bonded via metal layers 15 and 16 and separated by a central portion. The magnetic layer 12 or 14 corresponds to the first or second magnetic layer, and the closed magnetic circuit layer 17 corresponds to the third magnetic layer.
[0059] As the material of the antiferromagnetic layer 11, alloys such as FeMn, NiMn, PtMn, and IrMn can be used. As materials for the ferromagnetic layers 12, 14 and the closed magnet...
Embodiment 2
[0074] Other embodiments of the present invention will be described below with reference to the accompanying drawings.
[0075] Figure 4 A schematic configuration of the MTJ device of this example is shown.
[0076] like Figure 4 As shown, the MTJ device 3 according to this embodiment includes an antiferromagnetic layer 31 (first antiferromagnetic layer), a ferromagnetic layer 32 (first magnetic layer), an insulating layer 33, and a ferromagnetic layer 34 (second magnetic layer). layer), metal layers 35, 35', ferromagnetic layer (closed magnetic circuit layer) 36 (fourth magnetic layer), insulating layer 37, ferromagnetic layer 38 (third magnetic layer) and antiferromagnetic layer (second antiferromagnetic layer) Ferromagnetic layer) 39. The ferromagnetic layer 34 and the ferromagnetic layer (closed magnetic circuit layer) 36 (fourth magnetic layer) are combined at both end portions via metal layers 35, 35', and are separated from each other by the central portion.
[00...
Embodiment 3
[0100] Other embodiments of the present invention will be described below with reference to the accompanying drawings.
[0101] Figure 7 A schematic configuration of the MTJ device of this example is shown.
[0102] like Figure 7 As shown, according to the MTJ device 4 of the present embodiment, the antiferromagnetic layer 41 (the first antiferromagnetic layer), the ferromagnetic layer 42 (the first magnetic layer), the insulating layer 43 (the first insulating layer), the ferromagnetic layer 44 (second magnetic layer), metal layers 45, 45', ferromagnetic layer (closed magnetic circuit layer) 46 (fourth magnetic layer), insulating layer 47 (second insulating layer), ferromagnetic layer 38 (third magnetic layer) layer) and an antiferromagnetic layer (second antiferromagnetic layer) 39. The ferromagnetic layer 44 and the ferromagnetic layer (closed magnetic circuit layer) 46 are joined at both ends by metal layers 45, 45' and separated by a central portion.
[0103] Here, ...
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