Method by using wet etching with non-equivalence in directions to carry out even process

An anisotropic, wet etching technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., to solve problems such as affecting components, surface scratches, and reduced component reliability
CN1212650CInactive Publication Date: 2005-07-27MACRONIX INT CO LTD

Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
MACRONIX INT CO LTD
Publication Date
2005-07-27
Estimated Expiration
Not applicable Β· inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

Sulfur acid, phosphoric acid, hydrofluoric acid and water are mixed to form the etching solution. Then, the substrate is put into the etching solution. The etching solution flows across the insulation layer on the substrate with proper velocity of flow. The insulation layer possesses multiple channels. The different velocities of flow of the etching solution on the accidental surface of the insulation layer make different etching speeds. The etching speed at the bulging is higher than the speed at the dishing so as to reach the goal of evenness.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates to a method for planarization, and in particular to a method for planarization by anisotropic wet etching. Background technique

[0002] When manufacturing multi-metal interconnects, usually two layers of metal wires must be separated by insulating materials in order to avoid short circuits. However, because the surface of the wafer fluctuates, the deposited insulating layer also fluctuates with the surface of the wafer. At this time, surface planarization becomes a decisive step for the smooth progress of the photolithography process for the next layer of metal lines.

[0003] Therefore, in semiconductor manufacturing technology, surface planarization is an important technology for high-density photolithography. A flat surface with no height difference can avoid the problem of exposure scattering for precise pattern transfer (Pattern Transfer) steps. Chemical-Mechanical Polishing (CMP) is a technology that can now provi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More