Method by using wet etching with non-equivalence in directions to carry out even process
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- MACRONIX INT CO LTD
- Publication Date
- 2005-07-27
- Estimated Expiration
- Not applicable Β· inactive patent
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Abstract
Description
technical field
[0001] The present invention relates to a method for planarization, and in particular to a method for planarization by anisotropic wet etching. Background technique
[0002] When manufacturing multi-metal interconnects, usually two layers of metal wires must be separated by insulating materials in order to avoid short circuits. However, because the surface of the wafer fluctuates, the deposited insulating layer also fluctuates with the surface of the wafer. At this time, surface planarization becomes a decisive step for the smooth progress of the photolithography process for the next layer of metal lines.
[0003] Therefore, in semiconductor manufacturing technology, surface planarization is an important technology for high-density photolithography. A flat surface with no height difference can avoid the problem of exposure scattering for precise pattern transfer (Pattern Transfer) steps. Chemical-Mechanical Polishing (CMP) is a technology that can now provi...