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LED device and its preparing process

A technology for light-emitting diodes and manufacturing methods, which can be applied in the directions of lasers, phonon exciters, and laser parts, etc., and can solve the problems of reducing the performance and reliability of blue LEDs.

Inactive Publication Date: 2005-08-31
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The aforementioned disadvantages greatly reduce the performance and reliability of existing blue LEDs

Method used

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  • LED device and its preparing process
  • LED device and its preparing process
  • LED device and its preparing process

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0075] Figures 4A to 4E A cross-sectional view showing manufacturing steps of the blue LED 400 according to the first embodiment of the present invention.

[0076] refer to Figure 4A , an n-type layer 402 with a thickness of 3 μm to 5 μm is first formed on an insulating substrate 401 . The insulating substrate 401 is usually formed of sapphire. On the n-type layer 402, an n-type confinement layer 403 with a thickness of 0.1 μm to 0.3 μm, an active layer 404 with a thickness of 500 Å to 2000 Å for emitting light, and a p layer with a thickness of 0.1 μm to 0.3 μm A type-constraining layer 405 and a p-type layer 406 with a thickness of 0.2 μm to 1 μm are sequentially formed. Each of these layers 402-406 is formed of a GaN-type compound semiconductor material. For example, the quaternary compound semiconductor material In x Al y Ga 1-x-y N to form layers 402 to 406 with different conductivity types and impurity concentrations, wherein the number of moles x and y satisfy ...

no. 2 example

[0085] Figure 7 A cross-sectional view of a blue LED 700 according to a second embodiment of the present invention is shown. exist Figure 7 , the blue LED 700 is similar to Figures 4A to 4E Components of the illustrated blue LED 400 are represented by like reference numerals. To simplify the description, only the difference between the second embodiment and the first embodiment will be described below.

[0086] In the manufacturing process of the blue LED 700, all the steps are the same except that an adhesion layer 701 is applied to cover the sidewall 400a and the bottom surface 400b of the LED structure 700 before the conductive layer 411 is formed. Figure 4A The manufacturing steps of the blue LED 400 shown in to 4E. The adhesion layer 701 is used to enhance the adhesion between the sidewall and the bottom surface of the insulating substrate 401 and the conductive layer 411 . The material of the adhesion layer 701 can be Ti, Ni, Al, Cr, Pd, or any metal that can e...

no. 3 example

[0088] Figure 8 A cross-sectional view of a blue LED 800 according to a third embodiment of the present invention is shown. exist Figure 8 , the blue LED 800 is similar to Figure 4A Components of the blue LED 400 shown to 4E are represented by similar reference symbols. To simplify the description, only the third embodiment is different from the first or second

[0089] of the embodiment.

[0090] As described in the first and second embodiments, the light generated in the central active layer 404a then exits the blue LED 400 through the top side of the blue LED 400, ie, the central p-type layer 406a. However, the third embodiment provides a blue LED 800 that emits light generated in the central active layer 404 a from the bottom side of the blue LED 800 , that is, the insulating substrate 401 .

[0091] In order to realize the blue LED 800 of the third embodiment, the conductive layer 801 is formed as a light-transmitting layer to allow the light energy generated in ...

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Abstract

A LED device with a single leading line has an overlapped GaN-type semicondcutor layer on an insulative substrate, an annular insulative part such as a channel or a high-resistance part formed by ion implantation is said overlapped GaN-type semiconduction layer, a P-type electrode in central P-type layer and not connected electrically with peripheral P-type layer, and an electrically conductive layer coated on the sides and bottom surface of the said insulative sustrate and connected with N-type layer by ohm contact. Its electrically conductive layer can play the role of light reflector or light transmission layer.

Description

technical field [0001] The present invention relates to a light emitting diode (LED) device and a method of manufacturing the same. In particular, the present invention relates to an LED device formed of GaN type compound semiconductor material, the sidewall and the bottom surface of which are covered by a conductive layer, and a manufacturing method of the light emitting diode device. Background technique [0002] In recent years, more and more attention has been paid to using GaN-type compound semiconductors as materials for manufacturing blue, green, or blue-green light-emitting devices, such as blue LEDs or blue laser diodes (LDs). For example, a blue LED generally has the following structure: comprising at least one n-type GaN compound semiconductor layer, an active layer formed of intrinsic or doped GaN compound semiconductor material, and at least one p-type GaN compound semiconductor layer The semiconductor layers are sequentially stacked on a substrate. [0003] W...

Claims

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Application Information

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IPC IPC(8): H01L33/14H01L33/38H01S5/00
Inventor 林明德
Owner EPISTAR CORP
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