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Breakdown barrier and oxygen barrier for dielectric integrated circuit with low dielectric constant

A technology of integrated circuits and circuits, applied in circuits, electrical components, electrical solid devices, etc., to solve problems such as corrosion

Inactive Publication Date: 2005-09-14
GLOBALFOUNDRIES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it has been found that this combination of materials is unexpectedly susceptible to corrosion by oxygen
Even though nitrides and oxides are good barriers to oxygen, the methods used in the prior art to block oxygen have been shown to be ineffective and there is a need for an improved method of blocking corrosion

Method used

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  • Breakdown barrier and oxygen barrier for dielectric integrated circuit with low dielectric constant
  • Breakdown barrier and oxygen barrier for dielectric integrated circuit with low dielectric constant
  • Breakdown barrier and oxygen barrier for dielectric integrated circuit with low dielectric constant

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Embodiment Construction

[0014] refer to figure 1 , shows part of the upper IC. In the upper left corner, the arrow labeled kerf indicates the area 10 that will be the kerf of the wafer. At the center, the composite structure constitutes a rupture barrier designed primarily to block the propagation of ruptures from the area in or near the cutout into the body of the circuit. The rupture barrier 2 is embedded in a set of dielectric layers not shown separately but generally indicated by reference numeral 6 . Across the top of the figure, nitride layer 20, oxide layer 30 and nitride capping layer 31 combine to seal the top of the circuit.

[0015] A metal layer 40, such as Al, Cu, or any material that forms a good bond with Cu, fills the windows in layer 20 and extends on top of layer 30 to ensure a seal against oxygen diffusion. Since the interface between copper and the bottom of nitride 20 is a weak point for fracture propagation, metal 40 (eg Al) is selected to form a good bond with the material o...

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Abstract

A copper-interconnect, low-K dielectric integrated circuit has reduced corrosion of the interconnect when the crackstop next to the kerf is also used as the primacy barrier to oxygen diffusion through the dielectric, with corresponding elements of the crackstop being constructed simultaneously with the circuit interconnect elements; e.g. horizontal interconnect elements have a corresponding structure in the crackstop and vias between interconnect layers have corresponding structures in the crackstop.

Description

technical field [0001] The field of the invention is that of integrated circuit technology, particularly circuits with low-k dielectrics and copper metallization. Background technique [0002] The relatively new field of copper interconnect integrated circuits offers well-known performance advantages, especially when copper is combined with low-K or porous dielectric materials such as amorphous carbon, FLARE and Naroglas from Allied Signal, and SiLK from Dow Chemicals Even more so when used in combination. However, it has been found that this combination of materials is surprisingly susceptible to corrosion by oxygen. Even though nitrides and oxides are good barriers to oxygen, the methods used in the prior art to block oxygen have been shown to be ineffective and there is a need for an improved method of blocking corrosion. Contents of the invention [0003] The present invention relates to structures and methods for both blocking crack propagation and reducing oxygen d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/52H01L21/3205H01L21/768H01L21/77H01L23/00H01L23/58
CPCH01L2924/0002H01L23/585H01L23/564H01L2924/00H01L21/77
Inventor 亨利·A·尼三世文森特·J·迈克噶荷库尔特·A·托曼
Owner GLOBALFOUNDRIES INC