Semiconductor laser device and optical pick-up using it
A laser device and semiconductor technology, which is applied to semiconductor lasers, structural details of semiconductor lasers, semiconductor devices, etc., can solve the problems of expensive hologram components, increased housing, and increased cost, and achieve the effect of easy optical axis adjustment.
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Embodiment 1
[0041] Fig. 1 is an embodiment of the present invention, and is a diagram showing a schematic structure of a semiconductor laser device using a stem as a supporting member, and Fig. 1(a) is a plan view and a front view thereof. In addition, for comparison, a plan view and a front view of a conventional equivalent product are shown together in FIG. 1( b ). In Fig. 1, for the sake of brevity, the description is made with the top cover and the hologram element removed, and the state with these parts removed is the same as Figure 7 same.
[0042] In Fig. 1, 1 is a support as a supporting part, 2 is a semiconductor laser element, 3 is a light receiving element for signal detection, 4 is a lead wire for external connection, and 5 is a connecting element 2, 3 and lead wire 4. wire. The stand 1 functions as a plate-shaped supporting member, and has a planar region surrounded by a pair of left and right opposing end portions and a pair of front and rear opposing side portions. The s...
Embodiment 2
[0049] figure 2 is a diagram showing the structure of a semiconductor laser device according to another embodiment of the present invention. figure 2 In order to further promote miniaturization, the position of the vertical optical path is shifted as far as possible to the left, and the relationship between the curvature radii of the right curved surface 1a and the left curved surface 1b is Ra>>Rb.
[0050] In this example, more lead wires 4 are arranged to the right than the vertical optical path of the laser beam emitted from the semiconductor laser element 2, and the pitch between the lead wires 4 is narrower than that of the first embodiment. As a result, the component mounting area on the left side is further reduced.
Embodiment 3
[0052] image 3 is a configuration diagram showing a semiconductor laser device according to still another embodiment of the present invention. In this example, the semiconductor laser element 2 is mounted so that the laser beam is emitted in the horizontal direction with respect to the upper surface 1c. Furthermore, the laser beam is reflected upward by the reflection mirror 6 (reflector) installed at an angle of 45 degrees with respect to the upper surface 1c, and taken out vertically with respect to the upper surface 1c. That is, the laser beam reflected by the mirror 6 becomes a vertical optical path.
[0053] In addition, as in the case of Example 2, the relationship of the curvature radii of the right curved surface 1a and the left curved surface 1b is Ra>>Rb. And, taking the XX' section parallel to the front side 1e and the rear side 1f passing through the vertical optical path as the center, the width (Ld) of the front side is enlarged wider than the XX' section in t...
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