Gas shower head, film deposition apparatus, and film deposition method
A technology of gas shower head and film forming method, which is applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of difficulty and inconvenience in decomposing diffusion plates, and achieve the purpose of suppressing gas leakage and reducing tiny gaps. Effect
Inactive Publication Date: 2006-04-12
TOKYO ELECTRON LTD
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Problems solved by technology
However, when this method is used, the solder and the film-forming gas react in the vicinity of the flow path in the diffusion plate, and the reaction product may become particles.
Specifically, in the device of the above-mentioned structure, for example, in the case of using Ag, Cu, Zn and other gas shower heads to form solder other than the basic material, Cl and F in the film-forming gas react with the solder and may cause generate reaction product
In addition, when using solder, it is difficult to disassemble each diffusion plate
Therefore, when carrying out cleaning operation, it is inconvenient
Method used
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Embodiment
[0054] In order to confirm the relationship between the heating conditions of the above-mentioned embodiment and the bonding force between nickels, a test was conducted to study the relationship between the bonding force and the heating temperature using a set of test pieces made of nickel. The test pieces used in this test have a contact area of 25 cm with each other 2 . As the heating device, the film forming device of the present embodiment was used. In addition, the pressure in the chamber of the film-forming device was maintained at 1.33322×10 when nitrogen gas was supplied at a flow rate of 3600 cc / min. 2 pa (1Torr), the heating time is 12 hours, and the test is carried out.
[0055] Figure 5 is a characteristic diagram showing the test results. Such as Figure 5 As shown, the bonding strength of nickel increases sharply when the temperature of the test piece is 450°C or higher. The bonding force α shown by the dotted line in the figure indicates that when the g...
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Abstract
A gas shower head installed opposedly to the surface of a substrate, having a large number of hole parts in the surface thereof opposed to the substrate, and feeding multiple types of film forming gases fed from a gas feed passage simultaneously to the substrate through the hole parts, comprising a shower head body having a plurality of metal members with contact faces locally joined to each other by metal diffusion by heating the plurality of the metal members under specified temperature conditions in the stacked state in vertical direction and a plurality of gas flow passages passing through the inside of the shower head body so as to cross the contact faces and formed independently of each other for each type of the film forming gases so that these film forming gases are not mixed with each other, wherein the temperature conditions are such that the locally jointed portions by metal diffusion can be separated from each other by a reheating performed later.
Description
technical field [0001] The present invention relates to a gas shower head for supplying gas to a substrate such as a semiconductor wafer, a film forming apparatus and a film forming method for forming a film on the surface of the substrate using the gas shower head. Background technique [0002] In one manufacturing process of a semiconductor device, there is a process of forming a film on an object to be processed by CVD (Chemical Vapor Deposition). One of the devices for performing such a film-forming process is a monolithic film-forming device. Such a film forming apparatus has a processing container and a gas shower head. The processing container has a placing platform for placing semiconductor wafers (hereinafter referred to as wafers); the gas shower head is arranged opposite to the placing platform, and supplies film-forming gas toward the surface of the wafer. A gas flow path is formed in the shower head, and various film-forming gases can be uniformly supplied to ...
Claims
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IPC IPC(8): C23C16/455C23C16/44
CPCC23C16/45574C23C16/45565C23C16/45514C23C16/08C23C16/458
Inventor 村上诚志花田良幸
Owner TOKYO ELECTRON LTD