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Phase change recording material for information recording medium and information recording medium using said material

A technology for recording materials and recording media, applied in recording carrier materials, optical recording carriers, recording/reproducing by optical methods, etc., can solve problems such as difficult crystallization of recording layers

Inactive Publication Date: 2006-08-30
CMC MAGNETICS CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Furthermore, in the case where a rewritable information recording medium is used as an optical recording medium whose recording / erasing of information is performed optically, the recording layer tends to be difficult to perform initial crystallization in a short time after production

Method used

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  • Phase change recording material for information recording medium and information recording medium using said material
  • Phase change recording material for information recording medium and information recording medium using said material
  • Phase change recording material for information recording medium and information recording medium using said material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 and 2 and comparative example 1-4

[0212] Formed (ZnS) by sputtering on a disk-shaped polycarbonate substrate with a diameter of 220 mm, a thickness of 1.2 mm, and guide grooves with a groove width of about 0.5 μm, a groove depth of about 40 nm, and a groove pitch of 1.6 μm. 80 (SiO 2 ) 20layer (80 nm), Ge-Sb-Sn recording layer (15 nm), (ZnS) 80 (SiO 2 ) 20 layer (30 nm) and Al 99.5 Ta 0.5 Alloy reflective layer (200 nanometers), so as to make a phase-change optical disc.

[0213] When the recording layer composition is composed of (Sb 1-x sn x ) 1-y Ge y When expressed, the values ​​of x and y are shown in Table 1.

[0214] Composition (Sb 1-x sn x ) 1-y Ge y

x

y

initial crystallization

record performance

Remark

Example 1

0.25

0.18

it is good

it is good

Example 2

0.32

0.18

it is good

it is good

Comparative Example 1

0

0

0

0.11

0.16

0.21

Differ...

Embodiment 3

[0247] The following examples were carried out to examine whether the phase-change recording material of the present invention can be used as a recording material for an information recording medium on which recording is performed by a change in resistance.

[0248] That is, on a polycarbonate substrate with a diameter of 120 nm, Ge 0.18 Sb 0.66 sn 0.16 [(Sb 1-x sn x ) 1-y Ge y , where x = 0.2, y = 0.18] amorphous film. After measuring the resistivity of this amorphous film, the film was crystallized, and then the resistivity of the recrystallized film was measured. Crystallization was performed under the same conditions as those of the discs of the examples, and for the measurement of the resistivity, a resistivity meter Loresta MP (MCP-T350) manufactured by DIAINSTRUMENTS was used. The resistivities before and after crystallization are 1.03×10 -1 Ωcm and 0.80×10 -4 Ωcm, from which a resistivity change of almost three orders of magnitude can also be found between the...

Embodiment 4-11 and comparative example 6

[0256] In order to measure the composition of the phase-change recording material used in the recording layer of the optical recording medium, acid-dissolved ICP-AES (Inductively coupled Plasma-Atomic Emission Spectrpometru, inductively coupled plasma-atomic emission spectrometry) and x-ray Fluorescence analyzer. As for the acid dissolution ICP-AES, it used JY 38 S manufactured by JOBIN YVON as an analyzer. Dissolve the recording layer in diluted HNO 3 In , a matrix matching calibration method is used for quantitative evaluation. As for the X-ray fluorescence analyzer, RIX3001 manufactured by RigakuDenki Kogyo K.K. was used.

[0257] Using DDU1000 manufactured by PULSTEC INDUSTRIAL Co., Ltd., the performance of the disc was measured by applying focus servo and tracking servo to the groove with a retrieval power of 0.8 mW.

[0258] On a disc-shaped polycarbonate substrate with a diameter of 120 mm, a thickness of 1.2 mm, a groove width of about 0.5 microns, a groove depth of...

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Abstract

A phase-change recording material used for an information recording medium utilizing a crystalline state as a non-recorded state and an amorphous state as a recorded state, which has the composition of the following formula (1) as the main component: (Sb1-xSnx) 1-y-w-zGeyTewM1z wherein each of x, y, z and w represents atomicity, x, z and w are numbers which satisfy 0.01 < / =x< / =0.5, 0< / =z< / =0.3 and 0< / =w< / =0.1, respectively, and the element M1 is at least one element selected from the group consisting of In, Ga, Pt, Pd, Ag, rare earth elements, Se, N, O, C, Zn, Si, Al, Bi, Ta, W, Nb and V, and (I) when z=0 and w=0, y is a number which satisfies 0.1< / = y< / =0.3, (II) when 0<z< / =0.3 and w=0, y is a number which satisfies 0.05< / =y< / =0.3, and (III) when 0< / =z< / =0.3 and 0<w< / =0.1, y is a number which satisfies 0.01< / =y< / =0.3.

Description

technical field [0001] The present invention relates to a phase-change recording material and an information recording medium using the corresponding recording material. The material adopts a crystalline state as a non-recording state and an amorphous state as a recording state. More particularly, the present invention relates to a phase change recording material for an information recording medium on which high-speed recording / erasing is possible and an information recording medium using the corresponding recording material. Furthermore, the present invention relates to an information recording medium which is easy to perform initial crystallization, has a high signal amplitude, has excellent repeated rewriting characteristics, has excellent storage stability, and has excellent jitter properties at the time of high-transfer rate recording. Background technique [0002] For a rewritable information recording medium, a method is known in which the c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11B7/24C22C9/00G11B7/243G11B7/2433G11B7/258G11B7/259H01L45/00
CPCG11B2007/24316H01L45/1625G11B7/259H01L45/04H01L45/126H01L45/148G11B2007/24314G11B7/0062H01L45/06G11B2007/24312G11B7/243Y10S430/146H01L45/1233H10N70/231H10N70/8413H10N70/826H10N70/884H10N70/026
Inventor 堀江通和大野孝志
Owner CMC MAGNETICS CORPORATION