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Method for forming metal wire in semiconductor device

A technology of semiconductors and metal wires, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc.

Active Publication Date: 2006-08-30
KEY FOUNDRY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This phenomenon is known to be severe when the processing temperature of the chemically reactive cleaning process is too high

Method used

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  • Method for forming metal wire in semiconductor device
  • Method for forming metal wire in semiconductor device
  • Method for forming metal wire in semiconductor device

Examples

Experimental program
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Embodiment Construction

[0027] Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals are used to designate the same or like parts.

[0028] Figure 1 to Figure 7 is a cross-sectional view of a semiconductor device for explaining a method of forming metal lines in a semiconductor device according to a preferred embodiment of the present invention.

[0029] now refer to figure 1 , a semiconductor substrate 10 is prepared, a semiconductor device including a transistor (not shown) and the like is formed in the semiconductor substrate 10, and a lower wiring 12 is formed using a single damascene process. Next, a cover film 14 for preventing metal diffusion is formed in the semiconductor substrate 10 on which the lower wiring 12 is formed. The lower wiring 12 is formed using copper (Cu), and the cover film 14 is formed using a nitride film. The cover film 14 is formed to h...

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Abstract

Disclosed is a method of forming the metal line in the semiconductor device. The method comprising the steps of forming an interlay insulating film on a semiconductor substrate in which a lower line is formed, patterning the interlay insulating film to form an aperture unit for forming an upper line connected to the lower line, cooling the semiconductor substrate in which the aperture unit is formed at a given temperature, implementing a cleaning process using a hydrogen reduction reaction in order to remove polymer formed on the sidewall of the aperture unit and a metal oxide film formed on the lower line, implementing an annealing process in-situ within a chamber in which the cleaning process is implemented, and burying the aperture unit with a conductive material to form an upper line.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of forming metal lines in a semiconductor device which can reduce carbon loss in a low-k interlayer insulating film by performing a cleaning process, and performing an annealing process in situ in a processing chamber for performing the cleaning process, so as to remove residues generated in a reduction reaction of the cleaning process, thereby improving the interface of the low-k interlayer insulating film characteristic. Background technique [0002] Copper (Cu) is used as a metal wire of a semiconductor device due to the need for micromachining, rapid operation speed, and high reliability. Generally, the copper lines are formed by electroplating using a dual damascene pattern. After the copper film is formed by the electroplating method, in order to stabilize the performance, an annealing process is performed at a given temperature...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L21/3205H01L21/28H01L21/306H01L21/311
CPCY10S438/905H01L21/31116H01L21/76808H01L21/02046H01L21/76814H01L21/28
Inventor 金东俊
Owner KEY FOUNDRY CO LTD