Preparation method for silicon-based micro machine microwave/radiofrequency switch chip
A radio frequency switch and micromechanical technology, which is applied in separation methods, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve the problems of complex preparation process, unsatisfactory radio frequency performance of switches, etc., and achieves low preparation cost, low cost, The effect of mature technology
Inactive Publication Date: 2006-09-06
EAST CHINA NORMAL UNIV
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Problems solved by technology
Due to the extremely strict requirements on the film manufacturing process for stress control, the preparation process is very complicated, and the RF performance of the switch is not ideal
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[0067] In the above content of the invention, the technical solution of the present invention has been described in detail, and the solution is the specific implementation manner of the present invention, so it will not be repeated here. The invention is particularly suitable for preparing silicon-based micromachined microwave / radio frequency switch chips. Silicon-based microwave / RF micromechanical switches have broad application prospects in many aspects such as wireless mobile communication and Bluetooth technology, and are one of the main directions of contemporary microelectromechanical systems (MEMS) research. Micromechanical microwave / radio frequency switches are key devices in modern wireless communication systems, which can conveniently realize the switching of various signals.
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Abstract
The invention is a manufacturing method for a kind of silicon base micro-machine microwave / radio frequency switch. It includes silicon piece preparation and the first oxidization; photoetching and corroding the silicon dioxide layer, producing preliminary silicon dioxide pier; produces chrome and gold double-metal layer; photoetching the double-metal layer, forms the transmitting lines; produces polyimide sacrificial layer; photoetching and corroding the polyimide sacrificial layer; imidization; positive glue photoetching the image of contacting layer; evaporating chrome-gold double-metal layer; forms the contacting layer; produces silicon nitride suspending beam film; produces and corrodes the aluminum protection layer of silicon nitride; forms the suspending beam; produces the upper pole metal layer; forms the upper poles; forms the space structure of the suspending beam. The process is matured, the cost is low. The switch is the key element in current wireless communication system.
Description
technical field [0001] The invention relates to a method for preparing a silicon-based micro-mechanical microwave / radio frequency switch, belonging to the technical field of micro-mechanical device manufacturing. Background technique [0002] Microwave / RF micromechanical switches have broad application prospects in many aspects such as wireless mobile communication and bluetooth technology, and are one of the main directions of contemporary microelectromechanical systems (MEMS) research. Micromechanical microwave / radio frequency switches are key devices in modern wireless communication systems, which can conveniently realize the switching of various signals. Micromachined microwave / RF switches come in two flavors: direct contact and capacitively coupled. The invention relates to a method for preparing a direct contact micromechanical switch. So far, there are not many reports on the development of silicon-based micromachined microwave / RF switches. Ak...
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IPC IPC(8): H01L21/00H01P1/10H01P11/00B81B1/00
Inventor 茅惠兵赖宗声朱自强忻佩胜胡梅丽
Owner EAST CHINA NORMAL UNIV