Method for reducing impurity content in reaction chamber

Abstract

Before some manufacturing procedures are carried out in the reaction chamber, the protection layer, which does not react basically to the materials used in the reaction chamber, is formed on the inner surface so as to reduce defects such as granules and peels. For example, before using chlorine plasma carries out the etching the polymer layer, which does not react to chlorine plasma, is formed on the inner walls in the reaction chamber.

Description

(1) Technical field [0001] The invention relates to a method for reducing the impurity content in a reaction chamber, in particular to a method for improving the efficiency of the reaction chamber. (2) Background technology [0002] Known semiconductor manufacturing technology, especially for semiconductor factories that strictly require high yield, in order to ensure that each wafer is processed in a clean environment and that each wafer is processed in the same environment, Usually, after the reaction chamber is operated for a predetermined period of time or the reaction chamber is polluted to a certain predetermined degree, a cleaning process is performed on the reaction chamber to eliminate pollution, and a warm-up procedure is performed on the reaction chamber. process) to stabilize the internal environment of the reaction chamber before continuing to use the reaction chamber to process the wafer. [0003] In any case, since the wafer is processed in the reaction chamb...

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Problems solved by technology

[0004] Obviously, when more than one manufacturing process is performed on the wafer in the reaction chamber, the impact of the previous manufacturing process on the surface of the reaction chamber will affect the progress of the next manufacturing process.

For example, deposits deposited on chamber surfaces by a prior deposition process are likely to be etched by a subsequent etch process, forming particles that can contaminate the wafer surface

Another example is that when plasma is used in both the previous and subsequent manufacturing processes, the polymer formed on the surface of the reaction chamber by the plasma of the previous manufacturing process will interact with the plasma of the subsequent manufacturing process to cause contamination, thereby reducing its Efficiency and excellent rate

[0005] Further, even if only one manufacturing process is performed in the reaction chamber between the secondary cleaning procedures, the wafers will still be damaged because the manufacturing process may still interact with the surface of the reaction chamber or interact with the polymer formed on the surface of the reaction chamber by the manufacturing process. Encountered particles from surfaces inside the reaction chamber and peeling polymer, yet still cannot avoid contamination

[0006] To sum up, it can be clearly seen that the conventional semiconductor manufacturing technology cannot effectively eliminate the pollution from the interaction between the manufacturing process and the surface of the reaction chamber, so that the impurity content (particle level) in the reaction chamber cannot be effectively reduced and the pollution of the reaction chamber cannot be effectively reduced. The mean time between clean (MTBC) cannot be further shortened, and the efficiency of the reaction chamber is reduced due to the occurrence of contamination

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