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Dual cured B-stageable underfill for wafer level

An underfill, B-stage technology, applied in the fields of electric solid-state devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as failure

Inactive Publication Date: 2007-03-28
NAT STARCH & CHEM INVESTMENT HLDG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to differences in thermal diffusivity between electronic components, connecting materials and base materials, thermal cycling can stress individual components of an assembly and cause them to fail

Method used

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  • Dual cured B-stageable underfill for wafer level
  • Dual cured B-stageable underfill for wafer level
  • Dual cured B-stageable underfill for wafer level

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Example 1: Two dual-curable compositions were prepared and tested for their properties to determine suitable parameters for B-staging and to verify proper interconnection formation. The parts by weight of each component are recorded in Table 1.

[0055] Table 1

Formula A

(parts by weight)

epoxy resin

Epon1001

50

2-phenoxyethylpropene

Ester

25.2

Butylphenylmaleimide

amine

25

cobalt neodecanoate

1

tert-butylperoxyoctanoate

2

PMDA and 2P4Mz

Adduct

2

dodecanedioic acid

10

Formula B

(parts by weight)

epoxy resin

Epon1001

50

[0056] 2-phenoxyethylpropene

Ester

25.2

cobalt neodecanoate

1

tert-butylperoxyoctanoate

2

PMDA and 2P4Mz

Adduct

2

dodecanedioic acid

10

[0057] Obtaining proper B-staging pa...

Embodiment 2

[0065] Example 2: This example demonstrates the ability of a dual-cure underfill composition to weld eutectic Pb / Sn solder and form interconnects with a substrate. The same formulations A and B as in Example 1 were used. Place a 20 mil diameter eutectic solder ball on the glass slide. Apply a layer of underfill material to a thickness of approximately 20 mils on the cut glass by stencil printing. The cut slides were then placed on a hot plate preheated at 135°C and heated at the same temperature for 50 minutes. A smooth, void free, dry coat is formed.

[0066] The coated cut glass was then placed (coated side down) on a copper-faced FR-4 substrate. The FR-4 substrate (with the coated cut glass on top) was placed on a hot plate preheated to 240°C. It was observed that the diameter of the solder ball increased and the glass slide dropped onto the surface of the substrate, indicating solder fusion and the formation of an interconnect between the chip and the substrate. The u...

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Abstract

A silicon wafer has a B-stageable underfill material deposited on the active face of the wafer. The B-stageable underfill comprises a first composition with a lower curing temperature and a second composition with a higher curing temperature, characterized in that the first composition has been fully cured.

Description

technical field [0001] The present invention relates to B-stageable underfill compositions suitable for silicon wafer applications prior to singulation. The composition contains two chemical components that cure separately. Background of the invention [0002] Microelectronic devices contain millions of electronic circuit components that are electrically connected to each other, and the components are mechanically supported and electrically connected to a carrier or substrate. A connection is maintained between the circuit terminations of the electronic component and the corresponding circuit terminations on the substrate. [0003] One method of accomplishing this interconnection is to bump a polymeric or metallic material onto the circuit element or substrate termination. The terminals are aligned so that they touch each other, and the resulting assembly is heated to reflow bond the metal or polymeric material and strengthen these connections. [0004] During the normal ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/56H01L23/29C08G59/18H01L23/12H01L23/31
CPCH01L2224/73203H01L2924/0105H01L2924/01082H01L2924/01004C08G59/18H01L2924/01322H01L2924/01029H01L2224/29111H01L2924/0132H01L2924/01027H01L21/563H01L2924/01087H01L2924/01039H01L23/293H01L2924/01056H01L2224/274H01L2224/2919H01L2924/14H01L24/29H01L2924/01005H01L2924/01033H01L2924/01006H01L2924/0102H01L2924/01075H01L2224/83856H01L2924/15747H01L2924/00015H01L2924/0665H01L2924/00H01L23/48
Inventor B·马S·H·莱曼Q·K·童
Owner NAT STARCH & CHEM INVESTMENT HLDG CORP