Supercharge Your Innovation With Domain-Expert AI Agents!

Method for growing high-mobility gallium nitride epitaxial film

A high-mobility, gallium nitride technology, applied in the field of epitaxial growth of gallium nitride epitaxial film, can solve the problems of GaN material crystal quality degradation, destruction of GaN lattice, and affecting device performance

Inactive Publication Date: 2007-05-02
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the doping method is used, although the doped atoms can improve the mobility of the GaN material, the doped atoms destroy the original crystal lattice of GaN, resulting in a decrease in the crystal quality of the GaN material
Therefore, this method will affect the performance of the material itself and the device fabricated from it.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for growing high-mobility gallium nitride epitaxial film
  • Method for growing high-mobility gallium nitride epitaxial film
  • Method for growing high-mobility gallium nitride epitaxial film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0025] Referring to Fig. 1, a method for growing a high-mobility gallium nitride epitaxial film of the present invention comprises the following steps:

[0026] 1. On the substrate 10 sapphire (0001) or silicon (111) or silicon carbide (0001) or other substrates suitable for growing nitrides such as GaLiO 3 A low-temperature GaN nucleation layer is grown on the crystal surface of , ZnO, etc. by metal-organic chemical vapor deposition (MOCVD). The substrate temperature is about 500-600° C., the pressure is 400-600 torr, and the growth thickness is 0.01-0.06 μm.

[0027] 2. Afterwards, the temperature of the substrate 10 is increased to grow the gallium nitride recovery layer. The growth temperature of the gallium nitride recovery layer is between 1000-1100° C., the growth pressure is 100-300 torr, and the growth thickness is 0.1-0.3 μm.

[0028] 3. Finally, change the growth chamber pressure, unintentionally dope the high-mobility gallium nitride layer, the growth temperature ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
temperatureaaaaaaaaaa
pressureaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for growing high-mobility gallium nitride epitaxial film, characterized in that the method comprises the following steps, selecting a substrate, growing a layer of low-temperature gallium nitride core formation onto the substrate with a metallorganic chemical vapor deposition method, elevating the temperature of the substrate, growing a gallium nitride recovery layer onto the low-temperature gallium nitride core formation layer, finally changing growth chamber pressure, growing a high mobility gallium nitride layer on the gallium nitride recovery layer.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to the mobility at room temperature not less than 400cm 2 / V.s GaN epitaxial film epitaxial growth method. Background technique [0002] As a typical representative of the third-generation semiconductor materials, III-V gallium nitride materials have great application prospects in the fields of optoelectronics and microelectronics due to their unique physical, chemical and mechanical properties. GaN materials can be used to prepare HEMT, HFET, HBT, JFET, MOSFET, SAW and other devices. Mobility is an important parameter to characterize the quality of materials, and the acquisition of high mobility materials is of great benefit to material research and device development. However, due to the lack of heterogeneous substrate materials that match GaN materials, the purity of the materials is difficult to improve, so it is difficult to obtain GaN materials with high mobility. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/02C30B29/40H01L21/205
Inventor 王晓亮胡国新王军喜李建平曾一平李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com