Technological process of making silicon carbide ceramic part based on smelting deposition and fast forming techn
A silicon carbide ceramic and fused deposition technology is applied in the new process field of ceramic parts, which can solve the problems of difficulty in meeting requirements, poor plasticity of silicon carbide materials, consumption of wood, etc., and achieves high dimensional accuracy and improves the effect of development speed.
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Embodiment 1
[0021] Referring to Fig. 1, processing step of the present invention comprises:
[0022] 1.3D model design step, according to actual requirements, use Pro / E software to construct the three-dimensional data model of the workpiece, as shown in Figure 2; and store the model shown in Figure 2 as an STL format file;
[0023] 2. Use the layering software that comes with the rapid prototyping machine to do layering processing, and import the processed data into the manufacturing program; the above steps are mature technologies in this field.
[0024] 3. Put 100g of 2130# phenolic resin, 20g of starch, and 8g of benzenesulfonyl chloride into a container, and stir with a stirrer for 10 minutes to mix them evenly to make raw materials.
[0025] 4. As shown in Figure 3, the phenolic resin prototype was fabricated on the FDM rapid prototyping machine of Xi'an Jiaotong University. Pour the phenolic resin mixture 2 prepared in step 3 into the nozzle I (1), add polyethylene particles into t...
Embodiment 2
[0032] The difference between this embodiment and embodiment 1 is that in step 4, the movement speed of the three-dimensional workbench 10 is set to 25mm / s, the carbonization temperature in step 6: 1000°C, and the holding time: 0.5h; in step 7, The particle size of Si powder is 50 μm, the reaction temperature is 1550° C., the holding time is 1 h, and the rest are the same as in Example 1.
Embodiment 3
[0034] The difference between this embodiment and embodiment 1 is that in step 4, the movement speed of the three-dimensional workbench 10 is set to 20mm / s, the carbonization temperature in step 6: 1000°C, and the holding time: 0.5h; The particle size of Si powder is 75 μm, the reaction temperature is 1500° C., the holding time is 1 h, and the rest are the same as in Example 1.
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