Apparatus and method for producing indium ion beam

An ion beam and ion source technology, applied in ion beam tube, ion implantation plating, coating and other directions, can solve problems such as impracticality

Inactive Publication Date: 2002-06-12
NISSIN ION EQUIP CO LTD
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

it's not practical

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Apparatus and method for producing indium ion beam
  • Apparatus and method for producing indium ion beam

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

[0042] BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic diagram showing one embodiment of an ion source and an ion beam generator useful in practicing the indium ion beam generating method of the present invention.

[0043] The ion beam generator is configured with an ion source 2 for generating an ion beam 30 and a control device 40 for controlling the ion source 2 .

[0044] In this embodiment, the ion source 2 is equipped with a heating furnace 4 that heats the solid substance 6 to generate steam 8, and the steam introduction pipe 10 connecting the preheating furnace 4 and the plasma generator 16 is used to introduce the steam 8 from the heating furnace 4 To the plasma generator 16, the plasma generator 16 is used to ionize the steam 8 passing through the steam introduction pipe 10 to generate plasma 24, and the lead-out electrode 28 is used to generate 24 leads out the ion beam 30 . Also in this embodiment,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

An ion source 2 has a heating furnace 4 for annealing a solid material 6 to generate a steam 8 and a plasma generator 16 for ionizing the steam 8 to generate a plasma 24. The ion source 2 is for generating ion beam. An indium trifluoride is used as said solid material which has been once heated at temperature in the range of 600 DEG C. to lower than 1170 DEG C., thereby enabling to generate the indium ion beam in a stable amount. For the solid material 6, In(OF)xF3-x (x is 1, 2 or 3) may be used.

Description

field of invention [0001] The present invention relates to a device and a method for generating an indium ion beam from an ion source, the ion beam being used, for example, in an ion beam irradiation device, like an ion implantation device. In particular, the present invention relates to methods and apparatus for generating a steady amount of indium ion beams. Background technique [0002] Indium ions have attracted attention in the technical field of semiconductor production. Japanese Unexamined Publication No. Hei 03-13576 describes a method of generating an indium ion beam from an ion source, the method comprising the steps of: heating a furnace (carbon container) containing indium iodide therein at a temperature of 100-200° C. ) pre-annealing; increase the temperature of the heating furnace to 300-500 ° C to evaporate indium iodide; add the evaporated indium iodide gas vapor to the plasma generator (discharge chamber) to make the generator in the generator by arc discha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/32C22B4/00C22B4/08C22B58/00C23C14/22C23C14/24H01J27/02H01J37/08H01J37/317
CPCC23C14/243C22B58/00C22B4/005C22B4/08C23C14/221H01J37/317
Inventor 山下贵敏
Owner NISSIN ION EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap