Information processing structure

Abstract

The present invention is an information processing structure based on a single electron circuit that can obtain high-speed and stable operation through a single electron operation. The information processing structure is formed directly above the gate electrode (12) of a fine MOSFET (11), forming a A plurality of quantum dots (13) of different sizes form an energy barrier between the quantum dots and the grid electrode through which electrons can directly pass, and use the total number of electrons moving between the quantum dots and the grid electrode to represent information. In order to set a power supply electrode of the power supply so that it is in contact with the quantum dots, an energy potential barrier that electrons can directly pass through is formed between the quantum dots and the power supply electrode (14), and two information electrodes (15) are set so that they are connected to the quantum dots. The quantum dot contacts, the quantum dot and the information electrode are capacitively coupled, and electrons move between the power supply electrode and the gate electrode through the quantum dot by using the Coulomb blocking phenomenon according to the potential determined by the information electrode.

Description

technical field [0001] The present invention relates to an information processing structure that performs information processing using, for example, a nanoscale electronic structure of about 10nm to 0.3nm, and particularly relates to an information processing structure that detects pattern similarity using single electron motion. Background technique [0002] In recent years, in the manufacture of semiconductor devices, it has become possible to manufacture so-called nanoscale structures of, for example, 10 nm or less in accordance with the advancement of semiconductor microfabrication technology. If such a microfabrication technology is used to manufacture a structure with an extremely small electrostatic capacitance, it is possible to observe the so-called Coulomb blockade phenomenon in which the electrostatic energy of one electron in the structure increases and other electrons cannot enter the structure. , through the mutual Coulomb repulsion of electrons, the action of ...

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Problems solved by technology

[0017] Therefore, in order to realize such a small capacitance, a structure below the atomic level is required, which is practically impossible

[0018] Third, impurities or charges that inevitably exist around the point are trapped in the interface level, and thus there is a so-called "bias charge" or "substrate charge" in which charges are induced in the point by the trapped charges. , so there is a problem that the ideal single-electron action cannot be realized

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