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Pottern forming method

A technology of patterns and resist patterns, which is applied in the direction of photolithography, optics, instruments, etc. on the patterned surface, and can solve the problems such as the decrease in the precision of semiconductor integrated circuit devices

Inactive Publication Date: 2003-05-14
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, if a conductive film or an insulating film is etched using a resist pattern that varies in size, the resulting pattern will also have a variation in line width or aperture size, thereby reducing the precision of the semiconductor integrated circuit device.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 2

[0039] Below, refer to figure 2 (a)-(e) illustrate the pattern forming method of Example 2.

[0040] First, a chemically amplified resist material having the following composition was prepared.

[0041]Poly((2-methyl-2-adamantyl acrylate)-(methyl methacrylate)-(methacrylic acid)) (wherein, 2-methyl-2-adamantyl acrylate: methyl methacrylate :methacrylic acid=70mol%:20mol%:10mol%) (base polymer) 2g triphenylsulfonium triflate (acid generator) 0.4g propylene glycol monomethyl ether acetate (solvent) 20g

[0042] Then, if figure 2 As shown in (a), on the semiconductor substrate 20, a chemically amplified resist having the above-mentioned composition was applied to form a resist film 21 having a thickness of 0.2 μm.

[0043] Next, if figure 2 As shown in (b), for the resist film 21, after selectively irradiating far ultraviolet rays (wavelength: 13.5nm band) 23 through a reflective mask (not shown) having a desired mask pattern for pattern exposure, Such as figure 2 As sh...

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Abstract

A pattern forming method is charactered in that a resist film is formed from a chemically amplified resist material containing a base polymer including at least one ester out of acrylate and methacrylate and an acid generator that generates an acid when irradiated with light. The resist film is selectively irradiated for pattern exposure with extreme UV of a wavelength of a 1 nm through 30 nm band, and is developed after the pattern exposure, so as to form a resist pattern from an unexposed portion of the resist film. The resist pattern is then annealed, so as to smooth roughness having been caused on the resist pattern.

Description

technical field [0001] The present invention relates to a pattern forming method for selectively irradiating a resist film made of a chemically amplified resist material with far ultraviolet rays with a wavelength of 1-30 nm to form a resist pattern composed of unexposed parts of the resist film . Background technique [0002] In the semiconductor integrated circuit device process, along with the large-scale integration and downsizing of semiconductor integrated circuits, further development of lithographic printing technology is required. [0003] As the exposure light source used in lithographic printing technology, mercury lamp, KrF excimer laser (wavelength: 248nm band) or ArF excimer laser (193nm band) are commonly used at present, but for less than 0.1μm, especially less than 0.05μm At the same level, the scheme of using far ultraviolet rays (wavelength: 1-30nm band) with a wavelength shorter than that of the ArF excimer laser is being discussed. [0004] In the lith...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/039G03F7/004G03F7/40H01L21/027
CPCG03F7/40G03F7/0045
Inventor 远藤政孝笹子胜
Owner PANASONIC CORP