Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Adapter and method for preventing back flow of gas

An adapter and gas technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, gaseous chemical plating, etc., can solve the problems of reduced production capacity, reduced pump vacuum efficiency, and difficult cleaning of deposits in exhaust pipes, etc.

Inactive Publication Date: 2003-10-15
WINBOND ELECTRONICS CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] 1. Due to the reverse flow of water vapor, the sediment formed by the chemical reaction causes the exhaust pipe to be blocked, which reduces the efficiency of the vacuum pump and makes it difficult for the machine to maintain normal operation
[0004] 2. The sediment in the exhaust pipe is difficult to clean. Even if it is cleaned, the operation of the machine must be stopped, which reduces the production capacity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Adapter and method for preventing back flow of gas
  • Adapter and method for preventing back flow of gas
  • Adapter and method for preventing back flow of gas

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] As mentioned above, according to the prior art, the water vapor in the local brushing machine will flow countercurrently along the exhaust pipe to produce chemical reactions with reactive gases, reactive gases that have not completely reacted or by-products, and will Deposits form in the pipe wall. Therefore, the present invention provides an adapter for preventing gas backflow, which includes an outer tube and an inner tube.

[0043] Please refer to Fig. 1(a), which is a side view of the structure of the outer tube 11 of the adapter of the present invention. The outer tube 11 of the adapter for preventing gas backflow of the present invention is in the shape of a funnel, and the upper opening 111 and the lower opening 112 are used to connect with the first pipeline 17 and the second pipeline 18 respectively (see image 3 ) connection, the calibers of the upper opening 111 and the lower opening 112 correspond to the diameters of the first pipeline 17 and the second pip...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention is one adaptor to prevent gas from flowing backwards and its adaptation method. The adaptor includes one outer pipe with gas inlet on the side wall; and one inner pipe muff coupled inside the outer pipe and with one ring notch in the position corresponding to the gas inlet in the outer pipe. The adaptation method with the adaptor includes the following steps: providing inert gas and injecting into the gas inlet in the outer pipe; introducing nitrogen via the ring notch to make the inert gas distributed homogeneously between the inner pipe and the outer pipe; and forming inert gas cataract at one end of the adaptor to prevent gas from flowing backwards.

Description

(1) Technical field [0001] The invention relates to an adapter, in particular to an adapter and a method for preventing gas backflow. (2) Background technology [0002] In the semiconductor manufacturing process, in order to remove the incompletely reacted gas or to meet the requirements of process parameters, the chemical vapor deposition machine must be evacuated by a pump so that the chemical vapor deposition machine can operate normally. Taking the tungsten plug (Tungsten Plug) used for deposition to connect the upper and lower metal layers as an example, tungsten fluoride (WF 6 ), carbon hexafluoride (C 2 f 6 ), silane (Silane, SiH 4 ) and other reactive gases, the Low Pressure Chemical Vapor Deposition (LPCVD) machine (Low Pressure Chemical Vapor Deposition, LPCVD) is evacuated by a pump to control a pressure. The produced by-products are sent to the Local Scrubber through the Exhaust Pipe for further treatment. Although the pump has evacuated the low-pressure che...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/00C23C16/52H01L21/205H01L21/285
Inventor 温武彰
Owner WINBOND ELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products