High speed simulation method of ion implantation including dose effect

Abstract

The high-speed ion implantation simulating method including dosage effect combines the splitting method and dosage effect and is specifically to simulate alternate implantation of virtual ion and true ion until finishing the implantation of all true ions. In the only once simulation, implanted ions are divided into true ions and virtual ions artificially, the true ions are used to simulate cascade collision to produce defect distribution during the implantation; and the virtual ions are used to simulate range distribution. The said simulation method can simulate well the range distribution with experiment result coinciding with SIMS, and has high precision, high speed and high effect of simulation. The introduced defect production produces defect distribution capable of being used in subsequent annealing simulation for ultimate realization of technological simulation.

Description

Technical field:

[0001] The invention belongs to the technical field of integrated circuits, and in particular relates to an ion implantation simulation method including dose effects. Background technique:

[0002] At present, the feature size of integrated circuits is continuously shrinking, and it is expected to reach 50 nanometers around 2010. The formation of ultra-shallow junction is one of the key technologies of ultra-deep submicron devices. As a mature key process of integrated circuits, ion implantation has irreplaceable value. Therefore, ultra-low energy ion implantation and annealing technology has always been a research hotspot. one. The disadvantage of ion implantation and annealing lies in the enhancement of diffusion, which has become the key to restrict ultra-shallow junction technology; the method of simulation is an effective way to study its mechanism, so the implantation simulation of atomic model has received great attention in the world. The reason fo...

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