High speed simulation method of ion implantation including dose effect

An ion implantation, high-speed simulation technology, applied in semiconductor/solid-state device testing/measurement, discharge tubes, electrical components, etc., can solve problems such as reducing simulation efficiency and prolonging simulation time

Inactive Publication Date: 2003-10-15
PEKING UNIV +1
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Problems solved by technology

Thus, after 50 simulations, not only the final range distribution is produced, but also 50 sets of defect distributions
In the subsequent annealing and other process simulation

Method used

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  • High speed simulation method of ion implantation including dose effect
  • High speed simulation method of ion implantation including dose effect
  • High speed simulation method of ion implantation including dose effect

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Embodiment Construction

[0032] The following gives the simulation of arsenic 80keV energy, 1e13cm using the SMDE method -2 The specific process of dosage implantation of crystalline silicon:

[0033] 1. Determine the size S of the injection window in the simulation, usually 20a×20a, a is the side length of the crystal lattice of crystalline silicon, about 5.432 angstroms, then the size of S is 11802.6496 square angstroms.

[0034] 2. The injection dose is 1e13 (unit is cm -2 ) and the simulation window size S determine the number N of implanted ions simulated in one simulation experiment, N=D×S, and the number of implanted ions simulated in one simulation experiment is 118 ions.

[0035] 3. Set the depth position of each split layer, select the number of split layers as 9, and then mark each split layer as d 1 , d 2 , d 3 ,...,d 9 . During the simulation process, when the virtual ion reaches the depth of the splitting layer, splitting occurs, and one virtual ion splits into i virtual ions (here...

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Abstract

The high-speed ion implantation simulating method including dosage effect combines the splitting method and dosage effect and is specifically to simulate alternate implantation of virtual ion and true ion until finishing the implantation of all true ions. In the only once simulation, implanted ions are divided into true ions and virtual ions artificially, the true ions are used to simulate cascade collision to produce defect distribution during the implantation; and the virtual ions are used to simulate range distribution. The said simulation method can simulate well the range distribution with experiment result coinciding with SIMS, and has high precision, high speed and high effect of simulation. The introduced defect production produces defect distribution capable of being used in subsequent annealing simulation for ultimate realization of technological simulation.

Description

Technical field: [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to an ion implantation simulation method including dose effects. Background technique: [0002] At present, the feature size of integrated circuits is continuously shrinking, and it is expected to reach 50 nanometers around 2010. The formation of ultra-shallow junction is one of the key technologies of ultra-deep submicron devices. As a mature key process of integrated circuits, ion implantation has irreplaceable value. Therefore, ultra-low energy ion implantation and annealing technology has always been a research hotspot. one. The disadvantage of ion implantation and annealing lies in the enhancement of diffusion, which has become the key to restrict ultra-shallow junction technology; the method of simulation is an effective way to study its mechanism, so the implantation simulation of atomic model has received great attention in the world. The reason fo...

Claims

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Application Information

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IPC IPC(8): H01J37/317H01L21/265H01L21/66H01L21/70
Inventor 施小康黎明石浩于民黄如张兴张进宇铃木邦广冈秀树
Owner PEKING UNIV
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