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Film bulk acoustic resonator and method of forming the same

A thin-film bulk acoustic wave and resonator technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric devices/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve It is not easy to control the resonance frequency and other problems

Inactive Publication Date: 2003-10-22
SAMSUNG ELECTRO MECHANICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition to the above problems, it is not easy to control the resonant frequency in the FBAR in the above prior art

Method used

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  • Film bulk acoustic resonator and method of forming the same
  • Film bulk acoustic resonator and method of forming the same
  • Film bulk acoustic resonator and method of forming the same

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Embodiment Construction

[0042] Reference will now be made in more detail to embodiments of the invention, examples of which are described in conjunction with the accompanying drawings, wherein like reference numerals refer to like elements throughout. The embodiments are described below in order to explain the present invention through the figures.

[0043] Figure 4A and 4B are a cross-sectional view and a plan view, respectively, of an FBAR according to an embodiment of the present invention. refer to Figure 4A , the FBAR comprises a substrate 51, an insulating layer 52 formed on the substrate 51, a film supporting layer 55 formed on the insulating layer 52 so as to have an air gap A3, a film layer 56 formed on the film supporting layer 55, a film layer 56 formed on the film A first electrode 57 on layer 56 , a piezoelectric layer 58 formed on first electrode 57 , and a second electrode 59 formed on piezoelectric layer 58 .

[0044] According to this embodiment of the present invention, since ...

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Abstract

A film bulk acoustic resonator (FBAR) includes an insulation layer on a substrate to prevent a signal from being transmitted to a substrate. The FBAR includes a portion of a membrane layer corresponding to an activation area to adjust a resonance frequency band and improve a transmission gain of the resonance frequency band, the portion of the membrane layer being partially etched to have a thickness less than the other portion of the membrane layer. A method of forming the FBAR includes forming an sacrificing layer made of polysilicon, forming an air gap using a dry etching process, and forming a via hole. The method prevents structural problems occurred in a conventional air gap forming process and provides locations and the number of the via holes to be controlled.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to Korean Application No. 10-2002-19808 filed at the Korean Intellectual Property Office on April 11, 2002, which is hereby incorporated by reference. technical field [0003] The present invention relates to a thin film bulk acoustic resonator and a manufacturing method thereof, and more particularly, to a thin film bulk acoustic resonator having a thermally oxidized layer and a stable resonant structure easily formed by a dry etching process and a method for forming the same . Background technique [0004] Recently, according to the development of mobile communication terminals toward miniaturization and multifunctionality, parts used in mobile communication terminals such as those related to radio frequency have been rapidly improved. A filter, as a key component in a mobile communication terminal, performs the function of filtering a predetermined signal or selecting a desired sign...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H10N30/20H03H3/02H03H3/04H03H9/15H03H9/17H10N30/00H10N30/01H10N30/853
CPCH03H3/04H03H2003/0442H03H9/173H03H2003/021H03H9/15
Inventor 张济旭鲜于国贤
Owner SAMSUNG ELECTRO MECHANICS CO LTD
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