Embedded capacitor structure used for logic integrated cireuit

A capacitive structure and integrated circuit technology, applied in the direction of circuits, capacitors, electrical components, etc., can solve problems such as incompatibility
CN1459858AInactive Publication Date: 2003-12-03UNITED MICROELECTRONICS CORP
0 Cites 3 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
UNITED MICROELECTRONICS CORP
Publication Date
2003-12-03
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

A process for preparing the vertical 3D MIM capacitor structure features that a vertical 3D MIM capacitor structure compatible with the inlaid copper structure is made on base material to decrease the area of the capacitor structure in logic circuit and increase the capacitance density of the capacitors. A process for preparing an inlaid copper structure in IC in order to decrease the number of masks used in preparing said capacitor structure is also disclosed.
Need to check novelty before this filing date? Find Prior Art

Description

(1) Technical field

[0001] The present invention relates to a vertical three-dimensional metal-insulated metal capacitor structure, in particular to a method for manufacturing a vertical three-dimensional metal-insulated metal capacitor structure that integrates a copper inlay process and is compatible with the copper inlay process in a logic integrated circuit. (2) Background technology

[0002] Precision capacitors for complementary metal oxide semiconductor (CMOS, complementary metal oxide semiconductor) analog applications are generally metal-insulated metal capacitors (MIM capacitor structure, metal-insulator-metal capacitor) or polysilicon-insulated polysilicon capacitors (PIP capacitor, polysilicon-insulator -polysilicon capacitor).

[0003] However, polysilicon-insulator-polysilicon capacitors are less used due to many problems in CMOS applications. In particular, polysilicon-insulator polysilicon capacitors are generally implemented before CMOS, and heating and oxi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More