Method for making electrostatic-resisting knitted dress

A production method and anti-static technology, which are applied in the directions of knitting, weft knitting, and weft knitting circular knitting machines with separate action needles, etc. Market competitiveness, low cost, and the effect of strong antistatic function

Inactive Publication Date: 2004-03-24
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the high price of conductive fibers, the product cost is greatly increased

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0015] 1. Raw material selection

[0016] Common fibers use 21tex polyester / cotton (65 / 35) blended yarn for weaving basic fabrics. Its physical and mechanical properties determine some of the physical and mechanical properties of knitted fabrics. It is required that the surface of the yarn is smooth, even and dry, and the twist is moderate. The surface of the yarn can be properly waxed to improve the weaving performance of the yarn.

[0017] The conductive fiber is made of 28dtex / 5F carbon black polyester matrix composite fiber. Since the conductive fiber is too thin to meet the strength requirements during weaving, the conductive fiber can be twisted together with 13tex polyester / cotton blended yarn. The fineness of the conductive thread is 164dtex, and the twist is 6-8 twists / cm. The performance of conductive fibers determines the antistatic performance of knitted fabrics, and high-quality conductive fibers must be selected. The specifications and properties are shown in Ta...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Abstract

The method for producing anti-electrostatic knitted includes the following steps: (a) raw material selection; general fibre uses polyester / cotton blended yarn, and conductive fibre uses carbon black type polyester matrix bicomponent fibre; and (b) knitting process; basic stitch is weft plain stitch, knitting the conductive fibre into tuck and float combined stitch, the space distance of conductive fibre is 1.5-2.0 cm, and the yarn tension; polyester / cotton yarn tension is 5-9 cN, and the conductive fibre tension is 3-5 cN, and stitch length: polyester / cotton yarn is 2.5-3.8 mm, and the conductive fibre average stitch length is 1.0-1.8mm.

Description

technical field [0001] The invention relates to the garment industry, in particular to a method for producing antistatic knitted garments. Background technique [0002] Knitted garments such as T-shirts are made of textile materials. Textile materials are usually electrical insulating materials with high specific resistance. Especially for synthetic fibers such as polyester and acrylic fibers with poor hygroscopicity, under normal atmospheric conditions, the mass ratio Resistance up to 10 13 Ω·g / cm 2 above. Therefore, the charge generated when textiles and other items are rubbed is not easily dissipated, resulting in static electricity. The interference of static electricity will affect the performance of fabrics. For example, clothes will absorb a lot of dust and be easily stained. The accumulation of static electricity will generate a high voltage of several thousand volts, which will generate electric sparks, cause gas explosions in coal mines, and fires in oil fields....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): D04B1/14D04B9/00
Inventor 陈振洲
Owner JIANGNAN UNIV
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