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Polysilicon back gate SOI MOSFET for dynamic threshold voltage control

A polysilicon gate and polysilicon layer technology, applied in semiconductor/solid-state device manufacturing, circuits, transistors, etc., can solve the problems of shrinking size and easy leakage of devices

Inactive Publication Date: 2004-04-07
GLOBALFOUNDRIES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] So far, there is no suitable dynamic threshold voltage control scheme in conventional SOI MOSFET devices; therefore, due to the continuous shrinking of the size of such devices, the devices become extremely Leakage

Method used

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  • Polysilicon back gate SOI MOSFET for dynamic threshold voltage control
  • Polysilicon back gate SOI MOSFET for dynamic threshold voltage control
  • Polysilicon back gate SOI MOSFET for dynamic threshold voltage control

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Embodiment Construction

[0025] The SOI MOSFET device provided by the present invention, which contains a polysilicon back gate to control the threshold voltage of the front gate, and the method for manufacturing the device will now be described in detail with reference to the accompanying drawings.

[0026] first reference figure 1 , which illustrates a pristine SOI wafer that can be used in the present invention. specifically, figure 1 The original SOI wafer includes a buried oxide layer 12 that electrically insulates a silicon-containing substrate 10 from a silicon-containing layer 14. Note that silicon-containing layer 14 is an SOI layer in which active device regions can be formed. The term "silicon-containing" as used herein means a material which contains at least silicon. Examples illustrating such silicon-containing materials include, but are not limited to: Si, SiGe, SiC, SiGeC, Si / Si, Si / SiC, and Si / SiGeC. The oxide buried layer region 12 can be a continuous oxide buried layer region,...

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Abstract

A method of forming a silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) device is provided. The SOI MOSFET device includes a polysilicon back-gate which controls the threshold voltage of a polysilicon-containing front-gate. The back-gate functions as a dynamic threshold voltage control system in the SOI MOSFET device because it is suitable for use during circuit / system active periods and during circuit / system idle periods.

Description

technical field [0001] The present invention relates to the manufacture of semiconductor devices, and in particular to a method for manufacturing a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) with a polysilicon back gate, in which the polysilicon back gate controls a front gate device threshold voltage. The present invention also relates to back-gate SOI MOSFET devices having polysilicon back-gates among other components to control device threshold voltages. Background technique [0002] For the design of low-power silicon-on-insulator (SOI) CMOS devices, reducing the supply voltage and threshold voltage without loss of performance will eventually reach the limit of reducing the recovery time, because the static power dissipation has become a part of the total power expression major part. To meet the opposing requirements of high performance during circuit / system operation and low power consumption during circuit / system idle, a dyn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L21/02H01L21/336H01L21/762H01L27/12H01L29/45H01L29/786
CPCH01L29/41783H01L29/78648H01L21/76267H01L21/76283H01L29/458H01L21/76264H01L29/66772H01L21/18
Inventor 罗伯特·H·丹纳德维尔弗理德·E·何恩什哈赛恩·I·汉纳非
Owner GLOBALFOUNDRIES INC