Method for forming semiconductor component in non-implantation mode

A technology of semiconductors and components, applied in the field of forming semiconductor components by non-implantation method, which can solve the problems of difficulty in making semiconductor components, lower component qualification rate and electrical quality, and many process steps

Inactive Publication Date: 2004-06-02
GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

This method that requires secondary ion implantation and thermal activation to form transistors not only has more process steps, but also makes the process difficult to control due to too many manufacturing steps, which not only affects the stability of the components, but also makes it difficult to manufacture smaller semiconductor components. , which further reduces the qualification rate and electrical quality of components

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  • Method for forming semiconductor component in non-implantation mode
  • Method for forming semiconductor component in non-implantation mode
  • Method for forming semiconductor component in non-implantation mode

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Embodiment Construction

[0013] The present invention uses the non-ion implantation method of ion high-temperature drive-in (drive in) to form an ion-doped region in the semiconductor substrate to replace the known method of using secondary ion implantation and secondary thermal tempering process, so The deficiencies in the known technology can be effectively solved, and a transistor manufacturing method with few steps and simple manufacturing process is provided.

[0014] Figure 2(a) to Figure 2(e) It is a cross-sectional view of each step of making a semiconductor component in a preferred embodiment of the present invention. As shown in the figure, the manufacturing method of the present invention includes the following steps: first provide a semiconductor substrate 30, please refer to Fig. 2 (a) Form an oxide layer 32 and a polysilicon layer 34 sequentially on the surface of the semiconductor substrate 30 by chemical vapor deposition technology, and then use a lithographic etching process to etch ...

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Abstract

The invention discloses a method for forming semiconductor assembly using non-planting mode, wherein after forming a grid stack arrangement on a substrate surface, then a side wall gap article arrangement is formed in the grid stack arrangement by means of deposition and etching technique, depositing a silicate glass layer on the semiconductor, then the ions in the boron silicate glass layer are dispelled into the semiconductor substrate, forming a shadow and deep ion doping area in the substrate, i.e., shadow doping drain (LDD) and source / drain arrangement. The invention can reduce the procedures for making transistors effectively, and the quality of contact surface can also be improved.

Description

technical field [0001] The invention relates to a method for forming a semiconductor component by using a non-implantation method, in particular to a method for forming an ion-doped region in a semiconductor component by using a non-ion implantation method. Background technique [0002] It is known that the method of forming ion-doped regions in semiconductor components is formed by ion implantation. Please refer to FIG. 1 (a), as shown in FIG. The gate stack structure 16, and then before the ion doping step, a screen oxide layer (screen oxide) 18 is deposited on the semiconductor substrate 10; and then the ion doping process is performed, as shown in FIG. 1(b) , the semiconductor substrate 10 is implanted with a lower concentration of ions for the first time, so that it is doped in the semiconductor substrate 10 to form a shallow ion-doped region 20, which is used as a lightly-doped drain (LDD) ). [0003] After the shallow ion-doped region 20 is formed, the shielding oxi...

Claims

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Application Information

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IPC IPC(8): H01L21/336
Inventor 金平中
Owner GRACE SEMICON MFG CORP
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