Method for maknkig shallow trench isolation zone

A manufacturing method and technology of shallow ditches, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as inability to master the manufacturing process and inability to achieve machine self-testing, so as to achieve improved detection capabilities and low cost , the effect of simple method

Inactive Publication Date: 2004-07-28
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Another object of the present invention is to provide a defect monitoring method in the shallow trench isolation manufacturing process, so as

Method used

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  • Method for maknkig shallow trench isolation zone
  • Method for maknkig shallow trench isolation zone

Examples

Experimental program
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Embodiment Construction

[0017] figure 1 As shown, it is a flow chart of forming a shallow trench isolation region according to a preferred embodiment of the present invention.

[0018] Please refer to figure 1 , first provide a wafer (step 100), this wafer can also be referred to as a product wafer, wherein a mask layer has been formed on this wafer, and it is subsequently used as an etching mask when patterning the wafer screen. In this embodiment, a pad oxide layer is further formed between the mask layer and the wafer to protect the surface of the wafer, and the material of the mask layer is, for example, silicon nitride.

[0019] At the same time, a blank wafer is provided (step 102 ), wherein no photoresist layer, mask layer and other film layers are formed on the blank wafer.

[0020] Then, before performing an etching process on the wafer to define the trenches, the blank wafer is sent into an etching tool to perform an etching process (step 104 ). The etching process includes an etching r...

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Abstract

The invention provides a shallow trench insulating region making method, first providing a wafer formed with a covering layer, then providing a blank wafer and sending the blank wafer in an etching machine platform for etching, then viewing the defect number produced by the blank wafer, wherein if the defect number less than a standard value, sending the wafer in the etching machine platform for etching, and defining a trench in the wafer, and then filling an insulating layer in the trench and then removing the covering layer to form the shallow trench insulating region.

Description

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Claims

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Application Information

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Owner MACRONIX INT CO LTD
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