Method for maknkig shallow trench isolation zone

Abstract

The invention provides a shallow trench insulating region making method, first providing a wafer formed with a covering layer, then providing a blank wafer and sending the blank wafer in an etching machine platform for etching, then viewing the defect number produced by the blank wafer, wherein if the defect number less than a standard value, sending the wafer in the etching machine platform for etching, and defining a trench in the wafer, and then filling an insulating layer in the trench and then removing the covering layer to form the shallow trench insulating region.

Description

technical field [0001] The present invention relates to a manufacturing method of a shallow trench isolation (STI), and in particular to a defect monitoring method in a shallow trench isolation manufacturing process. Background technique [0002] The shallow trench isolation method is a technique that uses anisotropic etching to form trenches in the semiconductor substrate, and then fills the trenches with oxides to form device isolation regions. Since the isolation region formed by the shallow trench isolation method has the advantage of being scalable (Scalable), and can avoid the shortcomings of the bird's beak erosion (Bird's Beak Encroachment) in the traditional area oxidation (LOCOS) method isolation technology, therefore, for sub-micron (Sub-Micron) metal oxide semiconductor (MetalOxide Semiconductor, MOS) manufacturing process, is an ideal isolation technology. [0003] In the shallow trench isolation manufacturing process, island defects are often found in the tren...

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Problems solved by technology

[0007] Another object of the present invention is to provide a defect monitoring method in the shallow trench isolation manufacturing process, so as to improve the shortcomings of the known methods that cannot grasp the defects of the manufacturing process and cannot be self-detected by the machine

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