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Method of mfg. electronic device with wiring connection structure

A technology for connecting structures and electronic devices, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as poor contact

Inactive Publication Date: 2004-08-11
RENESAS TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, there is a problem of poor contact between the via plug and the metal film.

Method used

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  • Method of mfg. electronic device with wiring connection structure
  • Method of mfg. electronic device with wiring connection structure
  • Method of mfg. electronic device with wiring connection structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Figure 1 to Figure 9 It is a diagram showing the manufacturing method of the electronic device having the wiring connection structure according to the first embodiment of the present invention step by step. Figure 1-7 , 9 is a sectional view, Figure 8 is about along Figure 7 Top view at line VIII-VIII shown.

[0047] refer to figure 1 First, a titanium (Ti) film, a titanium nitride (TiN) film, or an undercoat film composed of laminated films thereof is formed entirely on the surface of the interlayer insulating film 1 by PVD. Then, a metal film made of an aluminum alloy such as Al—Cu, Al—Si—Cu, or Al—Cu—Ti is formed entirely on the surface of the lower cladding film by PVD. Next, an overcoat film made of titanium nitride is formed entirely on the surface of the metal film by PVD. The overcoat film functions as an anti-reflection film. Thereafter, these films are patterned by photolithography and anisotropic dry etching to form a first metal wiring composed of ...

Embodiment 2

[0059] Titanium contained in the barrier metal film 9 is soluble in hydrofluoric acid. Therefore, in the cleaning process with hydrofluoric acid, if the barrier metal film 9 is completely dissolved, even if no gap is generated between the barrier metal film 9 and the side wall of the via hole 8, the cleaning liquid will pass through the dissolved barrier layer. The gap created behind the metal film 9 penetrates into the metal film 3 .

[0060] In order to avoid this problem, in the present embodiment 2, the depth D of the through hole 8 (referring to Figure 4 ) is set at a depth at which the barrier metal film 9 formed on the side wall of the via hole 8 cannot be completely dissolved by cleaning.

[0061] Specifically, Figure 7 The cleaning after the CMP step shown is cleaning with dilute hydrofluoric acid for about 5 to 30 seconds. This also depends on the film-forming method of the barrier metal film 9, but during this period of time, the dissolution of the barrier meta...

Embodiment 3

[0064] Figure 10 11 is a cross-sectional view showing the manufacturing method of the electronic device with the wiring connection structure according to the third embodiment of the present invention step by step. In the figure, in particular, the vicinity of the bottom surface of the through hole 8 related to the etching process for forming the through hole 8 is shown enlarged.

[0065] In the above-mentioned embodiment 1, such as Figure 4 As shown, the via hole 8 is realized by penetrating the upper coating film and reaching the metal film 3 . In contrast to this, in this embodiment 3, as Figure 10 As shown, the anisotropic dry etching for forming the via hole 8 is stopped when the surface of the upper cladding film 4 is exposed. As a result, the bottom surface of the via hole 8 is defined by the surface of the upper cladding film 4, and the metal film 3 is not exposed.

[0066] refer to Figure 11 , and then, via plugs were formed through the same steps as in the fi...

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Abstract

To obtain a method for manufacturing an electronic device having a wiring connection structure which can avoid improper contact between a via plug and a metal wiring. In an etching step for forming a via hole 8, mixture gas of C4H8, O2, and Ar is used an etching gas. This enables the surface of the side wall of the via hole 8 to be smooth without fine irregularity at least in the upper part of the side wall 8. Thus, a barrier metal film 9 and the side wall of the via hole 8 can be tightly contacted with each other without causing a gap therebetween caused by the fine irregularity. As a result, in a cleaning step using a hydrofluoric acid after a CMP (chemical mechanical polishing) step, a cleaning solution can be avoid from passing through the gap between the film 9 and the side wall of the via hole 8 and being impregnated into the film 3.

Description

technical field [0001] The present invention relates to a manufacturing method of an electronic device with a wiring connection structure, in particular to a method for forming a via plug for interconnecting lower-layer wiring and upper-layer wiring in a multilayer wiring structure of the electronic device. Background technique [0002] In the traditional method of forming a via plug, it is performed in the following order: [0003] (a) A process of covering metal wiring and forming an interlayer insulating film; [0004] (b) On the surface of the interlayer insulating film, a step of forming a photoresist having a pattern opening above the metal wiring; [0005] (c) A step of performing anisotropic etching using the photoresist as an etching mask to remove the interlayer insulating film and form a via hole to expose the metal wiring. [0006] (d) the process of removing photoresist; [0007] (e) a step of forming a metal film on the structure obtained by step (d); [00...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065H01L21/311H01L21/768
CPCH01L21/76805H01L21/76802H01L21/76814H01L21/02063H01L21/31116H01L21/768
Inventor 泉谷淳子
Owner RENESAS TECH CORP
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