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Manufacture method of CMOS film transistor module

A technology of oxide semiconductor and thin film transistor, applied in semiconductor/solid-state device manufacturing, electrical components, optics, etc., can solve the problem of high manufacturing cost

Inactive Publication Date: 2004-09-08
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] Therefore, the above-mentioned existing manufacturing process must use six photomasks (that is, six photolithography and etching manufacturing processes) to manufacture CMOS TFT components, thus making the manufacturing cost quite high

Method used

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  • Manufacture method of CMOS film transistor module
  • Manufacture method of CMOS film transistor module
  • Manufacture method of CMOS film transistor module

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Embodiment Construction

[0038] see Figure 2-10 , used to illustrate the manufacturing process of the complementary metal-oxide-semiconductor thin-film transistor (CMOS TFT) component of the present invention.

[0039] First, see figure 2 , providing an insulating substrate 200 such as a glass substrate, the substrate 200 has an n-type metal oxide semiconductor (NMOS) region 210 and a p-type metal oxide semiconductor (PMOS) region 220, wherein the NMOS region 210 further includes a The first doped region 211 , a lightly doped region 212 and a first gate region 213 , and the PMOS region 220 further includes a second doped region 221 and a second gate region 222 .

[0040] see figure 2 , a buffer layer (buffer layer) 230 can be formed on the substrate 200, the buffer layer 230 is made of a silicon nitride layer (SiN x ) 232 and silicon monoxide layer (SiO x )234. For simplicity of illustration, the buffer layer 230 will not be drawn in the following Figures 3-10.

[0041] see figure 2 , and t...

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Abstract

The manufacture of CMOS film transistor module features that after manufacturing the pattern of the contact window, re-doping implantation of N type ion is performed to form the source / drain area of NMOS module. The manufacture process of the present invention reduces one photoetching step and mask use amount compared with available process.

Description

technical field [0001] The invention relates to a liquid crystal display (liquid crystal display, LCD) manufacturing process, and in particular to a manufacturing method of a complementary metal oxide semiconductor thin film transistor (CMOS TFT) component. Background technique [0002] A current active liquid crystal display device includes a driver circuit, and the driver circuit further includes a complementary metal oxide semiconductor thin film transistor (CMOSTFT) device. However, since the NMOS TFT component in the CMOS TFT component will have the problem of gate leakage current in the off state (Off state) due to the action of hot carriers, the NMOS TFT component Devices are usually designed with a lightly doped drain region (LDD) to reduce gate leakage current. [0003] Use the following Figure 1A-1E , used to illustrate the existing complementary metal-oxide-semiconductor thin-film transistor (CMOS TFT) component manufacturing method. [0004] First, see Figur...

Claims

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Application Information

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IPC IPC(8): G02F1/136H01L21/8238H01L21/84
Inventor 罗平
Owner TPO DISPLAY