Configurable plasma volume etch chamber

Abstract

A plasma processing chamber (200) is provided. The plasma processing chamber includes a bottom electrode (144) configured to support a substrate (146) and a top electrode (142) located over the bottom electrode. The plasma processing chamber further includes a plasma confinement assembly (173) designed to transition between a closed orientation and an open orientation. In the closed orientation, the plasma confinement assembly defines a first volume (145) for plasma during processing, and in the open orientation, the plasma confinement assembly defines a second volume during processing which is larger than the first volume.

Description

technical field [0001] The present invention relates generally to semiconductor fabrication, and more particularly to plasma etch chambers that use multiple confinement structures to control plasma volume. Background technique [0002] In semiconductor manufacturing, plasma etching is commonly used to etch conductive and dielectric materials. A plasma etch chamber is typically used to etch selected layers deposited on a substrate defined by a photoresist mask. Generally, the process chamber is configured to receive a process gas, and radio frequency (RF) power is applied to one or more electrodes within the process chamber. The pressure in the chamber is controlled according to a particular desired treatment. Upon application of the desired radio frequency (RF) power to one or more electrodes, the process gas in the chamber is activated, thereby generating a plasma. The plasma is configured to perform a desired etch of selected layers on the semiconductor wafer. [0003]...

AI Technical Summary

Problems solved by technology

However, no variable plasma volume is provided within a single chamber in the known art

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