Configurable plasma volume etch chamber

A plasma and plasma technology, applied in the field of plasma etching chamber, can solve the problem of not setting plasma volume, etc., and achieve the effects of increasing production volume, reducing time, and increasing service cycle

Inactive Publication Date: 2004-11-24
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, no variable plasma volume is provided within a single chamber in the known art

Method used

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  • Configurable plasma volume etch chamber
  • Configurable plasma volume etch chamber
  • Configurable plasma volume etch chamber

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Embodiment Construction

[0037] An invention is disclosed for an etch chamber that controls the plasma volume through the use of multiple enclosures. In the following description, several specific details are set forth in order to provide a thorough understanding of the invention. However, it may be possible for one skilled in the art to practice the present invention without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure the present invention.

[0038] Figure 3A A block diagram of an etch chamber 140 having a configurable plasma volume confinement region 145 is shown in accordance with one embodiment of the present invention. The etching chamber 140 includes: an upper electrode 142 , a lower electrode 144 , and a small plasma volume limiting region 145 defined between the upper electrode 142 and the lower electrode 144 . A wafer 146 to be etched is placed on the lower electrode 144 . ...

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Abstract

A plasma processing chamber (200) is provided. The plasma processing chamber includes a bottom electrode (144) configured to support a substrate (146) and a top electrode (142) located over the bottom electrode. The plasma processing chamber further includes a plasma confinement assembly (173) designed to transition between a closed orientation and an open orientation. In the closed orientation, the plasma confinement assembly defines a first volume (145) for plasma during processing, and in the open orientation, the plasma confinement assembly defines a second volume during processing which is larger than the first volume.

Description

technical field [0001] The present invention relates generally to semiconductor fabrication, and more particularly to plasma etch chambers that use multiple confinement structures to control plasma volume. Background technique [0002] In semiconductor manufacturing, plasma etching is commonly used to etch conductive and dielectric materials. A plasma etch chamber is typically used to etch selected layers deposited on a substrate defined by a photoresist mask. Generally, the process chamber is configured to receive a process gas, and radio frequency (RF) power is applied to one or more electrodes within the process chamber. The pressure in the chamber is controlled according to a particular desired treatment. Upon application of the desired radio frequency (RF) power to one or more electrodes, the process gas in the chamber is activated, thereby generating a plasma. The plasma is configured to perform a desired etch of selected layers on the semiconductor wafer. [0003]...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/46H01J37/32H01L21/3065
CPCH01J37/32568H01J37/32623H01L21/3065
Inventor B·M·殷T·倪L·李D·赫姆克
Owner LAM RES CORP
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