Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Laser annealing appts. and its tech

A technology of laser annealing and laser processing, which is applied in the direction of laser welding equipment, manufacturing tools, metal processing equipment, etc., can solve the problems of not being able to provide real-time, not being able to effectively improve the process qualification rate and film quality, and not being able to integrate the laser annealing process. Achieve the best film quality and the best process qualification rate

Active Publication Date: 2005-01-12
AU OPTRONICS CORP
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the above-mentioned detection techniques are all carried out after the entire batch of materials is completed, they cannot be integrated into the laser annealing process. Therefore, only the process parameters of the next batch of materials can be adjusted, and real-time (Real Time) cannot be provided. ) amendment, as a result, will not be able to effectively improve the process pass rate and film quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Laser annealing appts. and its tech
  • Laser annealing appts. and its tech
  • Laser annealing appts. and its tech

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] Please refer to figure 1, is a schematic diagram of a laser annealing device in a preferred embodiment of the present invention. The laser annealing device 100 is suitable for laser annealing process, and the laser annealing device 100 includes a laser processing module 110 , a resistance measurement module 120 , a host circuit module 130 and a carrying module 140 , for example. Wherein, a first carrier 142 of the carrier module 140 carries, for example, a first base material 152 that has not been subjected to laser annealing and whose surface is amorphous silicon, and a second carrier 144 of the carrier module 140, for example, carries a Laser annealing is completed, and the surface is a second substrate 154 of polysilicon type. In addition, for example, a transfer mechanism 146 is disposed between the first stage 142 and the second stage 144 , which is suitable for transferring the substrate on the first stage 142 to the second stage 144 .

[0047] please refer agai...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The laser annealing device includes a laser processing module, a resistance measuring module and a host circuit module. The laser-processing module provides a laser beam to an amorphous silicon thin film to make it recrystallize so as to form a polysilicon film. Resistance measuring module is suitable to measuring sheet resistor of polysilicon film. Based on the measured value of resistance, the host circuit module outputs relevant feedback signal to the laser processing module in order to adjust energy density of laser beam to optimum. The device raises quality of film prepared and annealing qualification rate.

Description

technical field [0001] The invention relates to a thin-film transistor technology, and in particular to a laser annealing technology for a low-temperature polysilicon thin-film transistor. Background technique [0002] With the development of high technology, video products, especially digital video or imaging devices, have become common products in daily life, and currently the most popular displays in these digital video or imaging devices are thin film transistor liquid crystals Display (Thin Film Transistor Liquid Crystal Display, TFT LCD). Among various thin film transistors, the electron mobility of polysilicon (Poly-Silicon, Poly-Si) thin film transistors can reach 200cm 2 / V-sec or more, far greater than the electron mobility of an amorphous silicon (Amorphous Silicon, α-Si) thin film transistor. Therefore, the volume of the thin film transistor can be reduced and the aperture ratio can be increased, thereby increasing the brightness of the display and reducing pow...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B23K26/00H01L21/324H01L21/336
Inventor 曹义昌吴焕照林武雄林文章
Owner AU OPTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com