Connecting unit including contactor having superior electrical conductivity and resilience, and method for producing the same

Abstract

Provided is a connecting unit capable of improving both the electrical conductivity and the resilience of a contact contacting an external connection part such as, in particular, an IC, and to provide a method for manufacturing the same. For instance, the top face, the bottom face, and both side faces of a conductive member (40) are completely surrounded by an auxiliary resilient member (41). The conductive member (40) is composed of a material having specific resistance lower than that of the auxiliary resilient member (41). The auxiliary resilient member (41) is composed of a material having a yield point and an elastic modulus higher than those of the conductive member (40). Thereby, both the electrical conductivity and resilience of the spiral contact can be improved well.

Description

Technical field [0001] The present invention relates to, for example, a connection device as an IC socket on which an IC (integrated circuit) is mounted, and more particularly, to a connection device that has good conductivity and elasticity of contacts in contact with an external connection portion of an IC, and a method of manufacturing the same. Background technique [0002] The semiconductor inspection device described in Patent Document 1 temporarily electrically connects the semiconductor to an external circuit board or the like. On the back side of the semiconductor, a plurality of spherical contacts arranged in a grid or matrix are provided, and a plurality of recesses are provided on the insulating plate opposed to the semiconductor, and spiral contacts are arranged oppositely in the recesses. [0003] When the back side of the semiconductor is pressed against the insulating plate, the spiral contactor contacts with the outer surface of the spherical contactor and is rol...

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Problems solved by technology

[0008] However, for example, the manufacturing method in Figure 37 is that the main body of the spiral contact is mainly formed by electroplating with nickel, and the fine contact of this spiral contact is used, the conductor resistance is too large, and the inspection is prone to fail or cannot be inspected.

[0009] And, in the manufacturing method of Fig. 38, the components that constitute the spiral contact include the substrate 63 in addition to the copper foil 4' and the like. In this structure, the elasticity of the spiral contact is reduced, and the spiral contact cannot be in contact with the semiconductor. The shape of the spherical contact fits well and produces good elastic deformation, which is prone to poor contact

[0010] Moreover, in Patent Document 1, there is no mention of properly improving the conductivity and elasticity of the spiral contact.

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