Groove capacitor and its manufacture
A technology of capacitors and trenches, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as damaging dielectric chemical reactions, achieve low wire resistance, fast access time, and increase performance.
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Examples
Embodiment Construction
[0031] In order to manufacture a trench capacitor 1 in a semiconductor substrate 10, a hole trench 2 is introduced into the semiconductor substrate 10 from a substrate surface 11, and an external electrode, for example, as a "buried plate" , is, for example, provided in a section of the semiconductor substrate 10 adjacent to the hole trench 2 by depositing a region in the semiconductor substrate 10, furthermore, the hole trench 2 There is an active region 13 extending into the semiconductor substrate 10 and lined with a dielectric layer 5 such as, for example, metal oxides and oxides of rare earths, such as Al 2 o 3 , HfO 2 , ZrO 2 , La 2 o 3 , can be provided as the dielectric layer 5 . Next, a neck region 12 is located between the substrate surface 11 and the active region 13 . In this exemplary embodiment of the method according to the invention, however, a silicon nitride layer 9 is provided on the semiconductor substrate 10, which in this case comprises crystalline ...
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Abstract
Description
Claims
Application Information
- IPC
- H01L21/02; H01L21/334; H01L21/8242; H01L27/108; H01L29/94
- CPC
- H01L29/945; H01L29/66181
- Inventors
- H·塞德; A·塞格