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Lutetium disilicate blended submicron imaging fluorescent sreen and its preparing method

A lutetium disilicate and fluorescent screen technology is applied in the field of doped lutetium disilicate submicron imaging fluorescent screen and its preparation, which can solve the problems of long light decay time, easy deliquescence of thin films, low coupling efficiency and the like, and achieve high X-ray absorption. coefficient, high quality of single crystal film, and the effect of improving resolution

Inactive Publication Date: 2005-03-02
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Claims
  • Application Information

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Problems solved by technology

[0003] SCF fluorescent screens such as CsI(T1) in the prior art, Ce:YAG / YAG and Ce:LuAG / YAG have the following disadvantages: (1) CsI(T1) and Ce: effective atomic number and density of YAG crystals are very small ( Y eff They are 54.1 and 32 respectively, and the density is 4.52g / cm 3 and 4.55g / cm 3 ), therefore, their absorption conversion efficiency for X-rays is low
(2) CsI(T1) film is easy to deliquescence, and its light decay time is long (600ns), which is not suitable for fast real-time micro-X-ray imaging; (3) Ce:LuAG has a large effective atomic number and high density ( Y eff = 58.9, density = 6.67g / ce 3 ), but its light output is small (3000Ph / MeV), and the lattice mismatch between LuAG and YAG as the substrate is relatively large, which is not conducive to growing high-quality single crystal thin films on the substrate, which will Can seriously affect the optical performance of fluorescent screen; (4) there is afterglow phenomenon in the used scintillator of prior art; device and Si array peaks correspond to 600-1000nm)

Method used

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  • Lutetium disilicate blended submicron imaging fluorescent sreen and its preparing method

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preparation example Construction

[0041] The preparation method of the doped lutetium disilicate submicron imaging phosphor screen comprises the following steps:

[0042] (1) Raw material equipment:

[0043] ①According to the chemical formula (Ce x m z Re y Lu 1-x-y-z ) 2 Si 2 o 7 , and select x, y, z, equipped with polycrystalline raw materials;

[0044] ②According to the following components, select the ratio and prepare flux raw materials:

[0045] Composition wt%

[0046] PbF 2 50-60

[0047] PbO 10-20

[0048] PbO 2 or Li 2 Mo 2 O or K 2 Mo 2 o 7 20-40

[0049] ③According to the polycrystalline raw material: flux raw material=10-40wt%, determine the weight percentage ingredients of the above-mentioned raw materials;

[0050] (2) weigh each raw material according to the weight percentage determined in the above-mentioned (1) step;

[0051] (3) Preparation of lutetium disilicate substrate: lutetium disilicate is oriented and cut into substrate wafer...

Embodiment 1

[0063] Embodiment 1: (Ce 0.005 Lu 0.995 ) 2 Si 2 o 7 / Lu 2 Si 2 o 7 flicker screen

[0064] The selected resistance heating liquid phase epitaxy furnace is as figure 1 In the shown device, the crucible 9 in the main body furnace 101 is a platinum crucible. Polycrystalline raw material (Ce 0.005 Lu 0.995 ) 2 Si 2 o 7 with co-solvent (PbF 2 :PbO:PbO 2 =55wt%: 15wt%: 30wt%) is (Ce 0.005 Lu 0.995 ) 2 Si 2 o 7 / (PbF 2 -PbO-PbO 2 )=0.10 proportioning weighs each raw material, totally 500g, mixes evenly and packs in the platinum crucible 9 of φ80×50mm; 2 Si 2 o 7 The substrate 8 is placed in the clamp 7, and the clamp 7 is loaded into the bottom end of the rotating pull rod 6, and the position of the crucible 9 and the substrate wafer 8 is adjusted to be coaxial, and both are in the center of the main furnace body 101; 101 is heated up to 1200° C. to melt the raw materials and flux to form a saturated solution 10, and after keeping the temperature at 1200° C....

Embodiment 2

[0066] Embodiment 2: (Ce 0.001 In 0.1 Lu 0.899 ) 2 Si 2 o 7 / (In 0.1 Lu 0.9 ) 2 Si 2 o 7 flicker screen

[0067] Will (In 0.1 Lu 0.9 ) 2 Si 2 o 7 Polycrystalline material and co-solvent Li 2 Mo 2 o 7 By weight percentage is (Ce 0.001 In 0.1 Lu 0.899 ) 2 Si 2 o 7 / Li 2 Mo 2 o 7 = 0.40 proportioning, weighing 500g of each raw material, the size is φ20 × 0.03mm, the crystal plane direction is (001) (In 0.1 Lu 0.9 ) 2 Si 2 o 7 The substrate 8 is placed in the clamp 7, and the clamp 7 is loaded into the bottom end of the rotating pull rod 6, and the position of the crucible 9 and the substrate wafer 8 is adjusted to be coaxial, and both are in the center of the main furnace body 101; 101 is heated up to 1200° C. to melt the raw materials and flux to form a saturated solution 10, and after keeping the temperature at 1200° C. for 5 hours, gradually lower and rotate the lifting rod 6 so that the substrate wafer 8 is 3 mm away from the saturated liquid su...

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Abstract

The invention is a doped lutetium disilicate submicron imaging fluorescent screen and its preparing method, adopting a heating-resistance liquid phase epitaxy (LPE) furnace to grow a doped lutetium disilicate flicker film on a lutetium disilicate substrate to make it, and its structure expression is (CexMzReyLu1-x-y)2Si2O7 / (Lu1-yRe)Si2O7, where 0.001<=x<=0.01, 0 <=y<=0.3, 0.001<=z<=0.01, Re stands for one or multiple of Sc, Er, La, Ho, Dy, Yb, Yt, Gd, In, etc, and M stands for Eu or Tb. It can be widely applied to the ray detection fields such as scientific research, medical treatment, industrial nondestructive detection, geological exploration, security inspection, national defence, etc.

Description

technical field [0001] The invention relates to a submicron imaging fluorescent screen, in particular to a submicron imaging fluorescent screen doped with lutetium disilicate and a preparation method thereof, in particular to liquid phase epitaxy on undoped lutetium disilicate single crystal (Lu 1-y Re y ) 2 Si 2 o 7 (where 0≤y≤0.3, Re represents one or more of Sc, Er, La, Ho, Dy, Yb, Y, Gd or In, etc.) on a substrate (thickness is about 10 microns-2 mm) A layer of doped lutetium disilicate single crystal thin film (Ce x m z Re y Lu 1-x-y-z ) 2 Si 2 o 7 (wherein M represents one of Eu or Tb), thus preparing a fluorescent screen (Ce x m z Re y Lu 1-x-y-z ) 2 Si 2 o 7 / (Lu 1-y Re y ) 2 Si 2 o 7 , (0.001≤x≤0.01, 0≤y≤0.3, 0.001≤z≤0.01), this fluorescent screen can be widely used in scientific research, medical treatment, industrial non-destructive testing, geological exploration, safety inspection and national defense and other radiation detection fields. B...

Claims

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Application Information

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IPC IPC(8): H01J1/62H01J9/20
Inventor 赵广军严成锋徐军庞辉勇介明印何晓明夏长泰
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI