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Semiconductor device having multiple silicide types and a method for its fabrication

A metal silicide, oxide semiconductor technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to achieve the effect of reliable contact conditions

Active Publication Date: 2005-03-09
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to be able to manufacture complex IC components, it is necessary to further develop the IC process

Method used

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  • Semiconductor device having multiple silicide types and a method for its fabrication
  • Semiconductor device having multiple silicide types and a method for its fabrication
  • Semiconductor device having multiple silicide types and a method for its fabrication

Examples

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no. 1 example

[0052] Such as Figure 2a , 2b to 2g. Figure 2a is a flowchart to illustrate the manufacturing figure 1 A first example method 200 is shown having a matched metal suicide structure of NMOS and PMOS. Figures 2b to 2g is adopted Figure 2a Shown is a first example method 200 of making figure 1 Schematic diagram of the process steps for the IC structure shown. It should be noted here that the method 200 is not limited to fabricating metal silicide structures matching NMOS and PMOS. In fact, it can be used to form any two metal silicide regions on a semiconductor substrate, wherein the first region has one composition or one material ratio, and the second region has a different composition or material ratio.

[0053] In this embodiment, the first area is NMOS240, and the second area is PMOS270, such as Figure 2b shown. It should be noted that before performing the method 200, the NMOS 240 and the PMOS 270 can be formed first. For example, the NMOS 240 includes a gate e...

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Abstract

Provided is a semiconductor device and a method for its fabrication. The device includes a semiconductor substrate, a first silicide in a first region of the substrate, and a second silicide in a second region of the substrate. The first silicide may differ from the second silicide. The first silicide and the second silicide may be an alloy silicide.

Description

technical field [0001] The present invention relates to a semiconductor integrated circuit element, in particular to an element with metal silicide and its manufacturing method. Background technique [0002] The semiconductor integrated circuit (IC) industry has progressed very rapidly in recent years, making IC components not only smaller, but also more complex. However, in order to manufacture complex IC components, it is necessary to further develop the IC process. [0003] In Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), metal silicides are often used to obtain reliable contact conditions and low contact resistance. Metal silicides can be used to provide interfaces between metal lines and substrate contact areas, such as polysilicon gates, silicon sources, and silicon drains. Placing a metal silicide on the source / drain regions can reduce the sheet resistance of the path between the metal contact and the underlying structure. Currently, various transis...

Claims

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Application Information

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IPC IPC(8): H01L21/28H01L21/3205H01L21/336H01L21/768H01L21/8238H01L27/092H01L29/43H01L29/45H01L29/49H01L29/78H01L29/786
CPCH01L29/785H01L29/78648H01L21/28052H01L29/66795H01L21/823835H01L29/4908H01L29/458H01L21/823842H01L29/665
Inventor 林俊杰李文钦杨育佳林全益胡正明
Owner TAIWAN SEMICON MFG CO LTD
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