Separated grid flash memory unit and its mfg. method

Abstract

The present invention relates to a separate gate flash memory storage unit. It is includes substrate with element-isolating structure; selection gate structure placed on the substrate; interlaminar dielectric layer placed on the substrate and having opening, said opening expose partial selection gate structure, substrate and element-isolating structure; floating gate which is placed in the opening and whose part is extended to interlaminar dielectric layer surface; tunneling dielectric layer placed between floating gate and substrate; control gate which is placed in said opening, used for filling said opening and extented to the upper portion of selection gate structure; intergate dielectric layer placed between floating gate and control gate; source region placed in the substrate of one side of control gate which is not adjacent to selection gate structure and drain region placed in the substrate of one side of selection gate which is not adjacent to control gate.

Description

technical field [0001] The present invention relates to a semiconductor device, and in particular to a split gate flash memory unit and a manufacturing method thereof. Background technique [0002] Flash memory components have the advantages of being able to store, read, and erase data multiple times, and the stored data will not disappear after power failure, so it has become a widely used device for personal computers and electronic devices. A non-volatile memory element. [0003] A typical flash memory device uses doped polysilicon to make a floating gate (Floating Gate) and a control gate (Control Gate). Moreover, the floating gate is separated from the control gate by a dielectric layer, and the floating gate is separated from the substrate by a tunnel oxide layer (Tunnel Oxide). When writing / erasing (Write / Erase) data on the flash memory, by applying a bias voltage to the control gate and source / drain regions, electrons are injected into the floating gate or electron...

AI Technical Summary

Problems solved by technology

However, in the existing split gate structure, the control gate and the floating gate form a stack structure, and the area between the control gate layer and the floating gate cannot be increased, resulting in the inability to increase the gate coupling. rate and the problem of increasing component integration

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