Check patentability & draft patents in minutes with Patsnap Eureka AI!

Method and apparatus for high-voltage switching of ultrasound transducer array

A technology of ultrasonic transducers and switches, applied in electronic switches, measuring devices, material analysis using sound waves/ultrasonic waves/infrasonic waves, etc.

Inactive Publication Date: 2005-03-16
GENERAL ELECTRIC CO
View PDF5 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, it must be possible to cascade many such switches in series

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and apparatus for high-voltage switching of ultrasound transducer array
  • Method and apparatus for high-voltage switching of ultrasound transducer array
  • Method and apparatus for high-voltage switching of ultrasound transducer array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] As a start, note that the grounding shown in the diagram is a simplified representation. In each of the embodiments disclosed here, the ground terminal is more likely connected to the ss negative voltage. Although most simply represented as ground, and in some cases ground is indeed used, it should be understood that this is only a reference voltage and that other voltages, positive and negative (with respect to ground), may be used depending on the application.

[0037] The present invention is directed to a switching circuit that solves the above-mentioned problems. A large number of switches can be directly integrated in a high-voltage CMOS process to withstand the ultrasonic emission pulse voltage. The gate voltage can be uniquely programmed for each switch. The invention provides low power operation and allows switches to be cascaded without significant leakage current when the switches are on. Furthermore, the present invention provides a switch with its own l...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A high-voltage switching circuit comprising: a switch having ON and OFF states and having a parasitic gate capacitance and a control circuit for turning the switch on and off. The switch comprises a pair of DMOS FETs having a shared gate terminal, the sources of the DMOS FETs being connected to each other and the drains of the DMOS FETs being connected to the input and output terminals of the switch respectively, and biased at a bias voltage level. The control circuit comprises: a programming transistor having its drain connected to the shared gate terminal of the switch, its source connected to receive a programming voltage, and its gate connected to receive a programming transistor gate voltage; first circuitry for causing a first transition from a first level to a second (lower) level of the programming voltage; and second circuitry for causing a second transition from a first level to a second level of the programming transistor gate voltage. The second level of the programming voltage is higher than the bias voltage level by an amount sufficient to turn on the switch. The first level of the programming transistor gate voltage is approximately equal to the first level of the programming voltage, and the second level of said programming transitor gate voltage is lower than the second level of the programming voltage by an amount sufficient to turn on the programming transistor, whereby the second level of the programming voltage is applied to the shared gate terminal of the switch via the programming transistor.

Description

[0001] statement about the federal government [0002] Government-funded research and development [0003] The Government of the United States of America has certain rights in this invention pursuant to US Government Contract No. DAMD17-02-1-0181 awarded by the US Military. [0004] Related Patent Applications [0005] This application is based on U.S. Patent Application Serial No. 10 / 248968, filed March 6, 2003, entitled "Integrated High-Voltage Switching Circuit for Ultrasound Transducer Array" continuation and claims priority thereto. technical field [0006] The present invention generally relates to integrated high voltage switching circuits. In particular, the present invention relates to integrated high voltage switching circuits for use with arrays of elements. Such arrays include, and are not limited to, ultrasound transducer arrays, liquid crystal display pixel arrays, and the like. Background technique [0007] For purposes of illustration, various embodiment...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N29/24A61B8/00H03K17/10H03K17/687
CPCH03K17/6874H03K17/102
Inventor 罗伯特·G·沃德尼基
Owner GENERAL ELECTRIC CO
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More