Unlock instant, AI-driven research and patent intelligence for your innovation.

Lithographic apparatus and device manufacturing method

A technology of lithography and detectors, which is applied in semiconductor/solid-state device manufacturing, photolithography exposure equipment, microlithography exposure equipment, etc.

Inactive Publication Date: 2005-03-23
ASML NETHERLANDS BV
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] It is an object of the present invention to solve the problems encountered in detecting gases in lithographic apparatus

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lithographic apparatus and device manufacturing method
  • Lithographic apparatus and device manufacturing method
  • Lithographic apparatus and device manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0049] figure 1 A lithographic apparatus according to one embodiment of the present invention is schematically represented. The unit includes:

[0050] An illumination system (illuminator) IL for providing a radiation projection beam PB (eg UV or EUV radiation).

[0051] A first support structure (e.g. mask table) MT for supporting the patterning device (e.g. mask) MA and connected to a first positioning device PM for precise positioning of the patterning device relative to the object PL;

[0052] a substrate table (e.g. a wafer table) WT for holding a substrate W (e.g. a resist-coated wafer) connected to a second positioning device PW for precisely positioning the substrate relative to the object PL; and

[0053] A projection system (eg a reflective projection lens) PL is used to image the pattern imparted to the projection beam PB by the patterning device MA on a target portion C of the substrate W (eg comprising one or more dies).

[0054] As indicated here, the device i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A lithographic apparatus comprising a radiation system for providing a projection beam of radiation; a support structure for supporting patterning means, the patterning means serving to impart the projection beam with a pattern in its cross-section; a substrate table for holding a substrate; and a projection system for projecting the patterned beam onto a target portion of the substrate. According to the invention the apparatus further comprises a source for providing infrared radiation into a measurement zone within said lithographic apparatus, and a detector for receiving the infrared radiation from the source after having passed through said measurement zone and for outputting a signal indicative of the presence of a gas present within the measurement zone.

Description

technical field [0001] The invention relates to a photolithographic device and a device manufacturing method. Background technique [0002] A lithographic apparatus is an apparatus for projecting a desired image onto a target portion of a substrate. A lithographic apparatus may be used, for example, in the manufacture of integrated circuits (ICs). In this case, a patterning device such as a mask can be used to create a circuit pattern corresponding to one of the individual layers of the IC, and this pattern can be imaged onto a substrate (such as a silicon wafer) with a layer of radiation-sensitive material (resist). on a target portion (eg, including one or more dies). Typically, a single substrate contains a grid of adjacent target portions that are exposed one by one. Known lithographic devices include so-called steppers, in which each target portion is irradiated by exposing the entire pattern on the target portion at once, and so-called scanning devices, in which the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/207G03F7/20H01L21/027
CPCG03F7/70916G03F7/20
Inventor J·H·J·穆尔斯V·Y·巴尼内
Owner ASML NETHERLANDS BV