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Temperature sensor circuit

一种温度传感器、电路的技术，应用在电路、温度计、仪器等方向，能够解决很难、很难输出电压VOUT设置成目标电压等问题，达到输出电压高精确的效果

Inactive Publication Date: 2005-05-04
SEIKO INSTR INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is difficult to set the output voltage VOUT to the target voltage using equation (2)
Further, due to dispersion in the characteristics of the bipolar transistor 12 and in the characteristics of the two resistors 13 and 14, it is difficult to set the output voltage VOUT to a target voltage

Method used

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Examples

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no. 1 example

[0021] The temperature sensor circuit according to the first embodiment of the present invention is figure 1 shown in . exist figure 1 The temperature sensor circuit of the first embodiment shown in FIG. 7 is such that a base current error compensation circuit 19 is provided in the temperature sensor circuit shown in FIG. 7 . For example, something like figure 2 As shown in , the base current error compensation circuit 19 includes a bipolar transistor 27 whose base is connected to the drain of the second N-channel MOS transistor 26, and composed of the first N-channel MOS transistor 25 and The second N-channel MOS transistor 26 constitutes a current mirror circuit 28 . Note that it is assumed that the characteristics of the bipolar transistors 12 and 27 are equal to each other, and their emitter sizes are also equal to each other, and that the characteristics of the first and second N-channel MOS transistors 25 and 26 are also equal to each other, and their transistor size...

no. 2 example

[0023] A temperature sensor circuit according to a second embodiment of the invention is shown in FIG. 3 . In the temperature sensor of the first embodiment, the first and second resistors 13 and 14 are provided as fixed resistors. However, in the case of the first embodiment, if the drift of the output voltage VOUT due to dispersion in the characteristics of the bipolar transistors 12 and 27 and in the characteristics of the first and second resistors 13 and 14 is considered, then Then the fine adjustment of the output voltage VOUT is essentially the design of the temperature sensor circuit. In this case, at least one of the first and second resistors 13 and 14 of the first embodiment is replaced by a variable resistor, thus allowing the output voltage VOUT to be finely adjusted. As a result, the output voltage VOUT is set with higher accuracy than with fixed resistors.

no. 3 example

[0025] A temperature sensor circuit according to a third embodiment of the present invention is shown in FIG. 4 . In the temperature sensor circuit shown in FIG. 4, the variable resistors of the temperature sensor circuit according to the second embodiment are constructed of MOS switches. With this circuit configuration, the resistance value of the first or second resistor can be finely adjusted by the ON / OFF operation of the MOS switch at a stage of post circuit production, thus enabling precise setting of the output voltage VOUT .

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Abstract

Provided is a temperature sensor circuit capable of obtaining a highly precise output voltage as a desired output voltage. The temperature sensor circuit includes: at least a constant current source; and a base-to-emitter voltage multiplication circuit constructed by a bipolar transistor and resistors, in which a base current error compensation circuit is provided so as to eliminate an error of the base current of the bipolar transistor caused to flow through the resistor. Further, the temperature sensor circuit of the present invention has such a structure that a resistance value of the resistor that determines an output voltage may be controlled.

Description

technical field [0001] The present invention relates to a temperature sensor circuit configured with a semiconductor integrated circuit. Background technique [0002] A conventional temperature sensor circuit configured with a semiconductor integrated circuit is shown in FIG. 6 . Generally, in a temperature sensor circuit, the collector and base of the bipolar transistor 12 are set at the same voltage, and the emitter thereof is connected to the constant current source 11 . That is, the bipolar transistor 12 is diode-connected, and thus, outputs a base-to-emitter voltage (hereinafter simply referred to as “VBE”) of the bipolar transistor 12 to one output terminal 10 . In this case, it is generally known that VBE is independent of the current value of the constant current source 11, and thus has a definite constant voltage value. Thus, when an arbitrary voltage is requested to be output to the output terminal 10, it is difficult to respond to the request. [0003] Next, a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01K7/00G01K7/01H01L21/822H01L27/04H03K5/00
CPCG01K7/01G01K7/00
Inventor 佐藤丰
Owner SEIKO INSTR INC
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