Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Laminated method insulator metal capacitor and manufacturing method thereof

A kind of metal capacitor, technology of manufacturing method

Active Publication Date: 2005-06-08
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF0 Cites 33 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since this known technique does not form the required metal-insulator-metal capacitors during the metallization process to form the damascene structure, complex additional processes such as metal deposition, photomask, etch are required to form metal-insulator-metal capacitor, so its high cost and low efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Laminated method insulator metal capacitor and manufacturing method thereof
  • Laminated method insulator metal capacitor and manufacturing method thereof
  • Laminated method insulator metal capacitor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] A method of manufacturing a metal-insulator-metal capacitor according to an embodiment of the present invention will be described below with reference to the accompanying drawings. It should be understood that the following descriptions are for illustration purposes only, and are not intended to limit the present invention. In addition, in order to provide a clearer illustration, the illustrations are not drawn to scale.

[0018] In the following description, the process steps and corresponding structures according to the embodiments of the present invention do not cover the complete process of manufacturing a complete IC circuit, but can cooperate with other processes in different IC circuits in the field of semiconductor technology to manufacture the required complete IC circuit.

[0019] A method of manufacturing a metal-insulator-metal capacitor according to the present invention will be described below.

[0020] First, referring to FIG. 1A , it shows a structure ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a manufacturing method of laying-type metal-insulation-metal capacitor, in the process of integrated circuit and in the conducting layer of the multi-layer metal form the embedding metal-insulation-metal capacitor. The manufacturing of the metal-insulation-metal capacitor and the metal conduction wire adopt the common methods such as patternization and smoothing and so on and does not need extra luminous cover and procedure, so as to reduce the manufacturing approaches and therefore improve the producing efficiency and lower the cost, can greatly reduce the electric leakage between the flat plates but increase the unit area of the capacitance value.

Description

technical field [0001] The present invention relates to stacked metal-insulator-metal capacitors and methods of making the same, and more particularly to forming stacked metal-insulator-metal capacitors embedded in copper damascene structures in integrated circuit fabrication. Background of the invention [0002] Capacitors are one of the necessary components in integrated circuits, and they perform functions such as voltage adjustment and filtering in the circuit. In semiconductor integrated circuits, common types of capacitors are polysilicon-insulator-polysilicon capacitors, metal-insulator-metal capacitors, and so on. Among them, the metal-insulator-metal capacitor has a lower contact impedance, so its RC value is lower, and it is often used in integrated circuits that require high speed, and it is also often found in different applications such as analog circuits and hybrid circuits. [0003] In recent years, with the significant increase in the miniaturization of inte...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/768H01L27/10
Inventor 宁先捷
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com