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Rare earth-doped semiconductor infrared radiation thick-film electronic paste and preparation method therefor

A technology of infrared radiation and rare earth doping, used in electric heating devices, electrical components, ohmic resistance heating, etc., can solve the problems of poor heat storage durability and low photothermal conversion efficiency, achieve low self-temperature, and achieve bidirectional thermoelectricity and heat. Convert, choose a wide range of effects

Inactive Publication Date: 2016-04-06
DONGGUAN COREHELM ELECTRONICS MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, the traditional photothermal conversion materials developed in my country have technical defects such as low photothermal conversion efficiency and poor heat storage durability.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Embodiment 1, a rare earth-doped semiconductor infrared radiation thick-film electronic paste, the paste composition is composed of an organic carrier and a functional phase, and the weight percentage of the organic carrier in the composition is 50%, and the functional phase is 50%.

[0040] During the preparation, the first step is to mix the thickener, the organic auxiliary agent and the organic solvent to obtain an organic carrier, the proportion of which is 80wt% of the organic solvent, 15wt% of the thickener, and 5wt% of the organic auxiliary agent; wherein, in the organic solvent terpineol 50wt%, tricresyl phosphate isopropanol 10wt%, butyl carbitol 10wt%, ethanol 5wt%, ethyl acetate 5wt%, cyclohexanone 5wt%, amyl propionate 5wt%, diffusion pump 5wt% oil, 5wt% tributyl phosphate, 50wt% ethyl cellulose, 50wt% silicone resin in thickener, 30wt% leveling agent in organic additives, 25wt% defoamer, 10wt% thixotropic agent, Adhesion promoter 10wt%, curing agent 5wt%, d...

Embodiment 2

[0044] Embodiment 2, a rare earth-doped semiconductor infrared radiation thick-film electronic paste, the paste composition is composed of an organic carrier and a functional phase, in which the weight percentage of the organic carrier is 35%, and the functional phase is 65%.

[0045] During preparation, the first step is to mix thickener, organic auxiliary agent and organic solvent to obtain an organic carrier, the ratio of which is: 90wt% of organic solvent, 5wt% of thickener, and 5wt% of organic auxiliary agent; Terpineol 45wt%, triphenyl phosphate 10wt%, ethyl acetate 10wt%, cyclohexanone 15wt%, furfuryl alcohol 10wt%, diffusion pump oil 5wt%, tributyl phosphate 5wt%, thickener is ethyl cellulose 55wt% plain, 30wt% acrylic resin, 15% amino resin, 30wt% leveling agent in organic additives, 25wt% foam suppressor, 15wt% thixotropic agent, 10wt% adhesion promoter, 10wt% dispersant, anti-skinning Agent 10wt%;

[0046] In the second step, the organic carrier is mixed with the f...

Embodiment 3

[0048] Embodiment 3, a rare earth-doped semiconductor infrared radiation thick-film electronic paste, the paste composition is composed of an organic carrier and a functional phase, in which the weight percentage of the organic carrier is 25%, and the functional phase is 75%.

[0049] During preparation, the first step is to mix thickener, organic auxiliary agent, and organic solvent to obtain an organic carrier. The ratio is: 92wt% of organic solvent, 4wt% of thickener, and 4wt% of organic auxiliary agent; Terpineol 55wt%, triphenyl phosphate 10wt%, turpentine 10wt%, butyl carbitol 10wt%, furfuryl alcohol 5wt%, diffusion pump oil 5wt%, tributyl citrate 5wt%, polyester in the thickener 45wt% resin, 40wt% phenolic resin, 15wt% cellulose acetate, 30wt% defoamer, 35wt% wetting agent, 25wt% thixotropic agent, 10wt% adhesion promoter in organic additives;

[0050] In the second step, the organic carrier and the functional phase are mixed and ground to make an electronic paste. The ...

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Abstract

The present invention discloses rare earth-doped semiconductor infrared radiation thick-film electronic paste and a preparation method therefor. The electronic paste comprises, in percentage by weight, 10%-90% of an organic vehicle and 10%-90% of a functional phase. The organic vehicle comprises, in percentage by weight, 50%-95% of an organic solvent,1%-40% of a thickening agent, and 0%-5% of an organic additive. The functional phase comprises, in percentage by weight, 40%-95% of a rare earth-doped infrared radiation semiconductor material, 5%-60% of a conductive material, and 0%-20% of a functional additive. According to the electronic paste, the selecting range of a base material is wide, the heating temperature range is wide, the heating efficiency is high, the temperature of a heating body itself is low, and the bidirectional thermoelectric conversion can be achieved. The preparation method comprises: a, mixing the thickening agent, the organic additive and the organic solvent to prepare the organic vehicle; b, mixing and grinding the organic vehicle and the functional phase to prepare the electronic paste; c, printing the electronic paste on a substrate by means of screen printing, and performing curing or sintering to form a film.

Description

technical field [0001] The invention relates to the technical field of electronic materials, in particular to a rare earth-doped semiconductor infrared radiation thick-film electronic paste and a preparation method thereof. Background technique [0002] Electric heating materials are materials that utilize the thermal effect of electric current. Metal electric heating materials mainly include noble metals (Pt), high-temperature melting point metals (W, Mo, Ta, Nb) and their alloys, nickel-based alloys and iron-aluminum alloys. The most widely used metal electric heating The materials are mainly nickel-chromium alloy and iron-aluminum alloy. Metal electric heating materials mainly include silicon carbide, lanthanum chromate, zirconia, molybdenum disilicide, etc. It has the advantages of high temperature resistance, corrosion resistance, oxidation resistance, and high electrothermal conversion efficiency, and is gradually replacing metal electrothermal materials. Traditional...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05B3/14
CPCH05B3/14H05B2203/002H05B2203/013H05B2203/017
Inventor 刘建苏冠贤
Owner DONGGUAN COREHELM ELECTRONICS MATERIAL TECH CO LTD
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