Unlock instant, AI-driven research and patent intelligence for your innovation.

Method of forming LED

A technology of light emitting diodes and physical methods, applied in the field of forming light emitting diodes, can solve the problems of increased cost, low pasting yield, and inability to effectively improve the yield of light emitting diodes.

Inactive Publication Date: 2005-06-08
ADVANCED EPITAXY TECH
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current traditional flip-chip manufacturing process needs to use bonding technology to connect the bonding electrodes of LEDs and the carrier, and the yield rate of bonding has not been high, resulting in the yield rate of LEDs produced by flip-chip has not been effective. increased, and increased costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of forming LED
  • Method of forming LED
  • Method of forming LED

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] Some embodiments of the present invention are described in detail as follows. However, the invention may also be practiced broadly in other embodiments than those described in detail, and the scope of the invention is not limited.

[0018] Moreover, in order to provide a clearer description and easier understanding of the present invention, the various parts in the illustrations are not drawn according to their relative sizes, and some dimensions have been exaggerated compared with other relevant scales; irrelevant details are not fully drawn. out, in order to simplify the diagram.

[0019] The main inventive spirit of the present invention is to use a chemical or physical method to form a metal layer as a permanent substrate to replace the aluminum oxide or silicon carbide substrate of the traditional LED. In this way, the conductivity and heat dissipation of the substrate can be increased, and the electrodes can be made in the opposite direction. Only a single line i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

This invention relates to a method of forming luminous diode. Use micro-image method to define the crystal particle of luminous diode to replace the cutting process, and use chemical or physical process to form the metal base plate of luminous diode.

Description

technical field [0001] The present invention relates to a method for forming a light-emitting diode, in particular to a method for forming a metal substrate of a light-emitting diode by chemical or physical methods. Background technique [0002] The general light emitting diode (Light Emitting Diode, LED) light-emitting principle is to use the inherent characteristics of semiconductors, which is different from the discharge and heat-emitting principle of the previous incandescent lamp, so the light-emitting diode is called a cold light source (cold light). Compared with traditional incandescent lamps or mercury lamps, light-emitting diodes have the advantages of high durability, long life, light weight, low power consumption, and no harmful substances such as mercury. [0003] The basic element structure of the light-emitting element is a PN diode structure, which includes a P-epitaxy layer and an N-epitaxy layer, and an active light-emitting layer is sandwiched between them...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
Inventor 郭政达蔡文忠陈聪育黄少华
Owner ADVANCED EPITAXY TECH