Unlock instant, AI-driven research and patent intelligence for your innovation.

Thin film producing method and light bulb having such thin film

A manufacturing method and thin film technology, applied in the field of light bulbs with the thin film, can solve the problems of inability to effectively gather light at the filament coil part, rough film interface or film, and insufficient control of the absolute value of the film thickness, etc.

Inactive Publication Date: 2005-06-22
PANASONIC CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the above-mentioned interferometric multilayer film, the key lies in the accuracy of the film thickness and the film quality for high-efficiency infrared reflection. 2 If the mixed gas of the gas is formed into a film by sputtering, the interface of the formed film or the film will be rough, and there is a problem that efficient infrared reflection cannot be sufficiently performed.
That is, the infrared rays reflected by the infrared reflective film are randomly reflected due to the interface of the interfering multilayer film or the cracks of the film, so that the filament coil part cannot be effectively focused, and there is a problem that the infrared reflection efficiency is lowered.
On the other hand, although the CVD method is easy to obtain a thin film with less cracks on the interface or surface, the control of the absolute value of the film thickness is not necessarily sufficient, the heating of the cover cannot be avoided, and the product of each thin film of a different type of layering is not necessarily sufficient. Many problems such as different raw material gases and film-forming conditions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film producing method and light bulb having such thin film
  • Thin film producing method and light bulb having such thin film
  • Thin film producing method and light bulb having such thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0023] Embodiment 1 uses the high-frequency sputtering method to alternately laminate Ta on the surface of the lamp housing 2 o 5 Thin films and SiO 2 film. In the present embodiment, in order to eliminate uneven film thickness distribution on the surface of the lamp housing, the lamp housing is rotated at a constant angular velocity around the axis Y of the spheroid. In addition, as a sputtering gas, in the formation of Ta 2 o 5 Ar gas and O are used for thin films 2 mixed gas, only in the formation of SiO 2 Ar gas was used for the thin film. In addition, the input power applied was 0 W at the beginning of thin film formation, then gradually increased, and the maximum input power of 4000 W was applied after 1 minute. When the sputtering pressure is 0.03, 0.04, 0.15, 0.4, 1.0, 2.0, 3.0, 4.0, 5.0, 6.0Pa respectively, use an atomic force microscope (hereinafter referred to as AFM) to measure the formation of 8 layers with a film thickness of about 1000nm Table 1 shows th...

Embodiment approach 2

[0029] Similar to Embodiment 1, this embodiment uses the high-frequency sputtering method to form Ta 2 o 5 Thin films and SiO 2 film. The difference from Embodiment 1 is that the sputtering gas pressure is 0.4 Pa, and as the sputtering gas, when forming Ta 2 o 5 Ar gas and N are used for thin films 2 Gas and O 2 gas mixture, forming SiO 2 Ar gas and N are used for thin films 2 Gas mixture. The surface roughness Ra of the eight-layer laminated films 10 to 13 with a film thickness of about 1000 nm formed under these conditions was measured by AFM, and the results are shown in Table 2 together with the data of the laminated film 3 formed in Embodiment 1.

[0030] film material

Type of sputtering gas

(ratio)

Surface roughness Ra

(nm)

Laminated film 3

Ta 2 o 5

SiO 2

Ar / O 2

(100 / 6)

Ar

4.8

Laminated film 10

Ta 2 o 5

SiO 2

Ar / N 2 / O 2

(100 / 1 / 6) ...

Embodiment approach 3

[0034] Similar to Embodiment 2, this embodiment uses the high-frequency sputtering method to form Ta 2 o 5 Thin films and SiO 2 film. The difference from Embodiment 2 is that the input power applied at the start of thin film formation was 4000W. The surface roughness Ra of the 8-layer laminated film 14 having a film thickness of about 1000 nm formed under these conditions was measured by AFM, and the results are shown in Table 3 together with the data of the laminated film 11 formed in Embodiment 2.

[0035] (table 3)

[0036] The work input at the beginning of film formation

Rate (W)

Surface roughness Ra

(nm)

Laminated film 11

0

3.5

Laminated film 14

4000

3.2

[0037] (substrate surface roughness: 2.0nm)

[0038] From the results shown in Table 3, it can be seen that the laminated film 14 formed by applying a power of 4000 W at the beginning of film formation has a rougher film than ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
surface roughnessaaaaaaaaaa
surface roughnessaaaaaaaaaa
surface roughnessaaaaaaaaaa
Login to View More

Abstract

A method for producing a thin film. When forming an optical thin film on the surface of a light source such as a light bulb or a discharge lamp, a thin film with less interface or surface roughness is formed on a spheroid-shaped substrate. In the vacuum chamber (4) of the film forming device, when forming a thin film on the spheroidal substrate (2) that rotates around the rotation axis according to the sputtering method, the gas pressure is 0.04-5.0Pa, or as the sputtering Gas, use the mixed gas of Ar gas and N2 gas, set the partial pressure ratio according to the Ar gas is 100 when the N2 gas is 1~6, or use the mixed gas of Ar gas and O2 gas, set the O2 when the Ar gas is 100 The gas is 6 to set the partial pressure ratio, the input power at the beginning of the film formation is the largest in the entire sputtering process, or a negative bias is applied on the covering body substrate, so that the roughness of the film section or surface is reduced, and the Film thickness distribution.

Description

technical field [0001] The present invention relates to a method for producing a film used when forming an optical film on the surface of a light source such as a light bulb or a discharge lamp, and a light bulb with the film. Background technique [0002] In order to achieve high efficiency of power consumption of incandescent light bulbs and halogen light bulbs, the following method has been proposed (for example, Jaina Luobui Lumineiting Engineering Engineering Societi, July 1980, pp. 197-203): Forming an infrared reflection on the surface of the lamp housing The visible light emitted by the bulb passes through the lamp housing intact, and the infrared light, which accounts for 70% to 80% of the emitted energy, is selectively reflected and concentrated on the filament part to heat the filament coil part. [0003] The infrared light emitted by the filament coil of the bulb is reheated by the reflected infrared rays based on the selective reflection of the infrared light by...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/00C23C14/34H01J9/20H01J61/35H01K1/32H01K3/00
CPCC23C14/0036C23C14/34C23C14/345H01J9/20H01J61/35H01K1/325H01K3/005
Inventor 桥本尚隆小俣雄二
Owner PANASONIC CORP