Unlock instant, AI-driven research and patent intelligence for your innovation.

Light shield and method for forming polycrystalline silicon layer applying the same

A polysilicon layer and amorphous silicon layer technology, which is applied in the original parts, optics, and optomechanical equipment for opto-mechanical processing. issues of time

Active Publication Date: 2005-06-29
AU OPTRONICS CORP
View PDF1 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, when the photomask 10 scans the amorphous silicon layer 16 in an S-shaped moving manner, since the first strip gap 12a is perpendicular to the second strip gap 13a, the single-number column range and the even-number column range of the amorphous silicon layer 16 The polysilicon crystal grains and grain boundaries formed by crystallization are different, which greatly affects the electrical properties of the thin film transistors completed in the subsequent manufacturing process.
[0009] If the photomask 10 is changed to a fixed direction, for example, the photomask 10 in FIG. 2 scans each range of the amorphous silicon layer 16 from left to right along the direction 17a, although the above-mentioned crystal grain direction and crystal grain direction can be solved. different direction of the boundary, but will thus increase the process time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light shield and method for forming polycrystalline silicon layer applying the same
  • Light shield and method for forming polycrystalline silicon layer applying the same
  • Light shield and method for forming polycrystalline silicon layer applying the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Please also refer to Figure 3-4 , image 3 is a schematic diagram of a photomask according to Embodiment 1 of the present invention, Figure 4 yes image 3 A schematic diagram of the state when the photomask scans the amorphous silicon layer in an S-shaped movement. exist Figure 3-4Among them, the photomask 20 comprises a photomask body 21, a first region 22, a second region 23, a third region 24 and a fourth region 25, the first region 22, the second region 23, the third region 24 And the fourth region 25 is formed in the mask body 21 . Wherein, the first region 22 and the second region 23 are respectively formed at two ends of the mask 20 , and both have a plurality of first strip-shaped gaps and second strip-shaped gaps that are substantially parallel to each other and facing a first direction. The third region 24 and the fourth region 25 are respectively formed between the first region 22 and the second region 23, and also have several third and fourth strip-sh...

Embodiment 2

[0040] Please refer to Figure 12 , which is a schematic diagram of a photomask according to Embodiment 2 of the present invention. exist Figure 12 Among them, the photomask 30 includes a photomask body 31, a first region 32, a second region 33, a third region 34 and a fourth region 35, the first region 32, the second region 33, the third region 34 And the fourth region 35 is formed in the mask body 31 . The first area 32 has several first strip-shaped gaps 32a and several first strip-shaped opaque regions 32b, and the first strip-shaped gaps 32a are parallel to and alternately arranged with the first strip-shaped opaque regions 32b. The second region 33 has several second strip gaps 33a and several second strip opaque regions 33b, the second strip gaps 33a are parallel and staggered with the second strip opaque regions 33b, the second The strip gap 33a is parallel to the first strip gap 32a. The first strip gap 32a and the second strip gap 33a correspond to the second st...

Embodiment 3

[0046] Please refer to Figure 13 , which is a schematic diagram of a photomask according to Embodiment 3 of the present invention. exist Figure 13 Among them, the photomask 40 comprises a photomask body 41, a first region 42, a second region 43, a third region 44 and a fourth region 45, the first region 42, the second region 43, the third region 44 And the fourth region 45 is formed in the mask body 41 . The first region 42 has several first strip-shaped gaps 42a and several first strip-shaped opaque regions 42b, and the first strip-shaped gaps 42a are parallel to and alternately arranged with the first strip-shaped opaque regions 42b. The second area 43 has several second strip-shaped gaps 43a and several second strip-shaped opaque regions 43b, the second strip-shaped gaps 43a are parallel and staggered with the second strip-shaped opaque regions 43b, and the second The strip gap 43a is parallel to the first strip gap 42a. The first strip-shaped gap 42a and the second s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
angleaaaaaaaaaa
Login to View More

Abstract

It is a light cover, which comprises one first area, one-second area, one third area and fourth area. The first area has multiple first strip light-tight areas and first strip gap. The second area has multiple second strip light-tight areas and second strip gap. The third area sets between the first and second areas and has multiple third strip light-tight areas and multiple third strip gaps. The fourth area sets between the second and third area. The method to form the polysilicon is to form a non-crystal silicon layer and then to use the cover to form continuous side crystal.

Description

technical field [0001] The present invention relates to a photomask and a method for forming a polysilicon layer using it, and in particular to a photomask applicable to continuous lateral growth technology and a method for using it to form a polysilicon layer. Background technique [0002] In today's era of rapid technological development, flat panel displays have been widely used in portable electronic devices such as notebook computers, personal digital assistants, and mobile phones. Among them, the LTPS panel uses laser annealing (Laser Annealing) to convert the a-Si layer into a polysilicon layer, which greatly improves the electron mobility of the thin film transistor. Therefore, the panel driving circuit and integrated circuit (integrated circuit, IC) can be integrated into the LTPS panel without additional circuit board design, which helps to increase the flexibility of panel and circuit design. Therefore, the LTPS panel will become a display panel with great potent...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/58G03F7/00H01L21/00
Inventor 孙铭伟
Owner AU OPTRONICS CORP