Electrostatic chuck, substrate support, clamp and electrode structure and producing method thereof

Abstract

Disclosed is an electrostatic chuck that makes point contact with a substrate by using a plurality of support balls to minimize the contact area so as to prevent contact damage to the semiconductor substrate; a substrate support; A fixture for securing the sheet; and a method of manufacturing the same. In addition, an electrode structure used as an upper electrode or a lower electrode provided in a plasma processing apparatus and a method of manufacturing the same are disclosed.

Description

technical field [0001] The present invention relates to an electrostatic chuck which makes point contact with a substrate: using a plurality of support balls to minimize the contact area in order to prevent contact damage to the semiconductor substrate; a substrate support; A jig for fixing a substrate; and a manufacturing method thereof. [0002] In addition, the present invention relates to a structure of an electrode provided in a plasma processing apparatus and a method of manufacturing the same, and more particularly, to an electrode for preventing high-frequency power loss and forming uniform plasma by : forming a metal layer on the overall area between an electrode base material and an insulating layer or forming a metal layer with a specific shape between the electrode base material and the insulating layer, and a manufacturing method thereof. Background technique [0003] In recent years, there has been an urgent need to improve positioning accuracy when patterning...

AI Technical Summary

Problems solved by technology

[0005] However, this conventional electrostatic chuck has the disadvantage that particles appear on the substrate 10 when the electrostatic chuck comes into contact with the substrate 10, and when the entire surface of the substrate comes into contact with the electrostatic chuck, there is Difficulty maintaining substrate flatness

[0008] However, in this case, there is a problem that it is difficult to prepare and mass-produce embossed planes

Therefore, according to the power characteristics of the high-frequency signal propagating along the surface of the conductor, the roughness or unevenness of the conductor surface has a great influence on the power transfer of the high-frequency signal, which can cause power loss of the high-frequency signal

In addition, power loss in the power transfer process of high-frequency signals is converted into thermal energy, which leads to an increase in electrode temperature

[0013] Therefore, conventional electrodes have the following problems: power loss of high-frequency signals, increase in electrode temperature due to power loss, and electrode damage due to increase in electrode temperature

[0014] In addition, recently, as substrates processed by plasma processing equipment become larger, there has been a problem that different parts of the substrate experience different levels of treatment

Since the power of the high-frequency signal is not uniformly applied to the conventional electrodes, the plasma cannot be uniformly generated

Also, as the area of ​​the electrode increases and thus the difference in the uniformity of the plasma between the center portion and the edge portion of the electrode increases, there arises a problem of unevenness in etching or deposition of the substrate to be processed.

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