Semiconductor device and methods of manufacture

Abstract

The present invention discloses a semiconductor device and a method of manufacture, the semiconductor device utilizes a substrate having a surface layer with a <100> crystal orientation. Tensile stress, which increases performance of the NMOS FETs, is added by silicided source / drain regions, tensile-stress film, shallow trench isolations, inter-layer dielectric, or the like. The present invention effectively improve the efficiency of the transistor.

Description

technical field [0001] The present invention relates to a semiconductor device, in particular to a complementary field-effect transistor and a manufacturing method thereof. Background technique [0002] The size reduction of metal-oxide-semiconductor field-effect transistors (MOSFET), including the reduction of gate length and gate oxide size, has promoted the speed and performance per unit element of integrated circuits in the past few decades. , density and cost improvements. In order to further enhance the performance of the transistor, the channel region can be strained to improve the mobility of carriers. Generally speaking, it is better to apply tensile stress to the N-type channel region of the NMOS (N-type metal oxide semiconductor) transistor along the source-drain direction, and to apply tensile stress along the direction of the PMOS (P-type metal oxide semiconductor) transistor. The source-drain orientation exerts compressive stress on its P-type channel region....

AI Technical Summary

Problems solved by technology

However, uniaxial tensile strain reduces hole mobility, while uniaxial compressive strain reduces electron mobility

Ge ion implantation can be used to selectively induce strain relaxation without reducing the mobility of holes or electrons, but this is difficult to achieve due to the close proximity of N-channel transistors to P-channel transistors.

Images