Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures

A resistance device, silver selenide technology, applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., can solve problems such as difficulty in forming silver selenide
CN1647278AInactive Publication Date: 2005-07-27MICRON TECH INC
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
MICRON TECH INC
Publication Date
2005-07-27
Estimated Expiration
Not applicable · inactive patent

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Abstract

A method of forming a non-volatile resistance variable device includes forming a patterned mass comprising elemental silver over a substrate. A layer comprising elemental selenium is formed over the substrate and including the patterned mass comprising elemental silver. The substrate is exposed to conditions effective to react only some of the elemental selenium with the elemental silver to form the patterned mass to comprise silver selenide. Unreacted elemental selenium is removed from the substrate. A first conductive electrode is provided in electrical connection with one portion of the patterned mass comprising silver selenide. A germanium selenide comprising material is provided in electrical connection with another portion of the patterned mass comprising silver selenide. A second conductive electrode is provided in electrical connection with the germanium selenide comprising material.
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Description

technical field

[0001] The present invention relates to methods of forming nonvolatile variable resistance devices and methods of forming structures comprising silver selenide. Background technique

[0002] Semiconductor manufacturing continues efforts to make individual electronic devices smaller and smaller, resulting in denser integrated circuits. One class of integrated circuits includes memory circuits in which information is stored in the form of binary data. Circuitry can be fabricated such that data is either volatile or non-volatile. Volatile memory causes data loss when power is interrupted. Non-volatile memory circuits retain stored data even when power is interrupted.

[0003] The present invention is primarily an improvement over the design and operation of memory circuits disclosed in U.S. Patent Nos. 5,761,115, 5,896,312, 5,914,893, and 6,084,796 to Kozicki et al., ultimately derived from U.S. Patent Application Serial No. filed on May 30, 1996 08 / 652,706 ...

Claims

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